HMC311LP3E Analog Devices, RF Amplifier MMIC, 14.5 dB 6 GHz, 16-Pin SMT
Tekninen dokumentti
Tekniset tiedot
Merkki
Analog DevicesAmplifier Type
MMIC
Typical Power Gain
14.5 dB
Typical Output Power
15.5dBm
Typical Noise Figure
4.5dB
Number of Channels per Chip
1
Maximum Operating Frequency
6 GHz
Mounting Type
Surface Mount
Package Type
SMT
Pin Count
16
Dimensions
3.1 x 3.1 x 1mm
Height
1mm
Length
3.1mm
Width
3.1mm
Series
Hittite
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+85 °C
Maximum Operating Supply Voltage
5 V
Alkuperämaa
Malaysia
Tuotetiedot
RF Amplifiers, Analog Devices Hittite
Analog Devices Hittite have a series of RF amplifiers that have a range of functions. Some feature low Noise amplifiers, some RF Amplifiers are integrated with resonators, negative resistance devices, varactor diodes, and buffer amplifiers and other offer high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC driver amplifiers.
Radio Frequency (RF) Amplifiers, Analog Devices
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 8,40
1 kpl (50 kpl/kela) (ilman ALV)
€ 10,416
1 kpl (50 kpl/kela) (Sis ALV:n)
50
€ 8,40
1 kpl (50 kpl/kela) (ilman ALV)
€ 10,416
1 kpl (50 kpl/kela) (Sis ALV:n)
50
Osta irtotavarana
| Määrä | Yksikköhinta | Per Kela |
|---|---|---|
| 50 - 50 | € 8,40 | € 420,00 |
| 100+ | € 8,00 | € 400,00 |
Tekninen dokumentti
Tekniset tiedot
Merkki
Analog DevicesAmplifier Type
MMIC
Typical Power Gain
14.5 dB
Typical Output Power
15.5dBm
Typical Noise Figure
4.5dB
Number of Channels per Chip
1
Maximum Operating Frequency
6 GHz
Mounting Type
Surface Mount
Package Type
SMT
Pin Count
16
Dimensions
3.1 x 3.1 x 1mm
Height
1mm
Length
3.1mm
Width
3.1mm
Series
Hittite
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+85 °C
Maximum Operating Supply Voltage
5 V
Alkuperämaa
Malaysia
Tuotetiedot
RF Amplifiers, Analog Devices Hittite
Analog Devices Hittite have a series of RF amplifiers that have a range of functions. Some feature low Noise amplifiers, some RF Amplifiers are integrated with resonators, negative resistance devices, varactor diodes, and buffer amplifiers and other offer high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC driver amplifiers.