HMC326MS8GE Analog Devices, RF Amplifier MMIC, 21 dB 4.5 GHz, 8-Pin MSOP
Tekninen dokumentti
Tekniset tiedot
Merkki
Analog DevicesAmplifier Type
MMIC
Typical Power Gain
21 dB
Typical Output Power
23.5dBm
Typical Noise Figure
5dB
Number of Channels per Chip
1
Maximum Operating Frequency
4.5 GHz
Mounting Type
Surface Mount
Package Type
MSOP
Pin Count
8
Dimensions
3.1 x 3.1 x 0.95mm
Height
0.95mm
Length
3.1mm
Maximum Operating Supply Voltage
5 V
Width
3.1mm
Series
Hittite
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+85 °C
Alkuperämaa
Taiwan, Province Of China
Tuotetiedot
RF Amplifiers, Analog Devices Hittite
Analog Devices Hittite have a series of RF amplifiers that have a range of functions. Some feature low Noise amplifiers, some RF Amplifiers are integrated with resonators, negative resistance devices, varactor diodes, and buffer amplifiers and other offer high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC driver amplifiers.
Radio Frequency (RF) Amplifiers, Analog Devices
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 9,00
1 kpl (50 kpl/kela) (ilman ALV)
€ 11,16
1 kpl (50 kpl/kela) (Sis ALV:n)
50
€ 9,00
1 kpl (50 kpl/kela) (ilman ALV)
€ 11,16
1 kpl (50 kpl/kela) (Sis ALV:n)
50
Tekninen dokumentti
Tekniset tiedot
Merkki
Analog DevicesAmplifier Type
MMIC
Typical Power Gain
21 dB
Typical Output Power
23.5dBm
Typical Noise Figure
5dB
Number of Channels per Chip
1
Maximum Operating Frequency
4.5 GHz
Mounting Type
Surface Mount
Package Type
MSOP
Pin Count
8
Dimensions
3.1 x 3.1 x 0.95mm
Height
0.95mm
Length
3.1mm
Maximum Operating Supply Voltage
5 V
Width
3.1mm
Series
Hittite
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+85 °C
Alkuperämaa
Taiwan, Province Of China
Tuotetiedot
RF Amplifiers, Analog Devices Hittite
Analog Devices Hittite have a series of RF amplifiers that have a range of functions. Some feature low Noise amplifiers, some RF Amplifiers are integrated with resonators, negative resistance devices, varactor diodes, and buffer amplifiers and other offer high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC driver amplifiers.