Tekninen dokumentti
Tekniset tiedot
Merkki
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
14.2 A
Maximum Drain Source Voltage
20 V
Series
DMN2011UFDF
Package Type
U-DFN2020
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
35 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
2.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
2.05mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
56 nC @ 10 V
Length
2.05mm
Minimum Operating Temperature
-55 °C
Height
0.58mm
Forward Diode Voltage
1.2V
Tuotetiedot
N-Channel MOSFET, 12V to 28V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 0,414
1 kpl (20 kpl/pakkaus) (ilman ALV)
€ 0,513
1 kpl (20 kpl/pakkaus) (Sis ALV:n)
20
€ 0,414
1 kpl (20 kpl/pakkaus) (ilman ALV)
€ 0,513
1 kpl (20 kpl/pakkaus) (Sis ALV:n)
20
Tekninen dokumentti
Tekniset tiedot
Merkki
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
14.2 A
Maximum Drain Source Voltage
20 V
Series
DMN2011UFDF
Package Type
U-DFN2020
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
35 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
2.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
2.05mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
56 nC @ 10 V
Length
2.05mm
Minimum Operating Temperature
-55 °C
Height
0.58mm
Forward Diode Voltage
1.2V
Tuotetiedot