Tekninen dokumentti
Tekniset tiedot
Merkki
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
21 A
Maximum Drain Source Voltage
30 V
Package Type
PDI3333
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
17 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.4V
Maximum Power Dissipation
1.8 W
Transistor Configuration
Dual Base
Maximum Gate Source Voltage
-20 V, +20 V
Width
3.15mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
3.15mm
Typical Gate Charge @ Vgs
21 nC @ 15 V
Height
0.8mm
Series
DMN3016LDV
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Tuotetiedot
Dual N-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 0,086
1 kpl (20 kpl/pakkaus) (ilman ALV)
€ 0,107
1 kpl (20 kpl/pakkaus) (Sis ALV:n)
20
€ 0,086
1 kpl (20 kpl/pakkaus) (ilman ALV)
€ 0,107
1 kpl (20 kpl/pakkaus) (Sis ALV:n)
20
Tekninen dokumentti
Tekniset tiedot
Merkki
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
21 A
Maximum Drain Source Voltage
30 V
Package Type
PDI3333
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
17 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.4V
Maximum Power Dissipation
1.8 W
Transistor Configuration
Dual Base
Maximum Gate Source Voltage
-20 V, +20 V
Width
3.15mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
3.15mm
Typical Gate Charge @ Vgs
21 nC @ 15 V
Height
0.8mm
Series
DMN3016LDV
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Tuotetiedot