P-Channel MOSFET Transistor, 1.9 A, 60 V, 3-Pin SOT-223 Infineon BSP171PH6327XTSA1

RS tilauskoodi: 911-4791Tuotemerkki: InfineonValmistajan osanumero.: BSP171PH6327XTSA1
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Tekninen dokumentti

Tekniset tiedot

Merkki

Infineon

Channel Type

P

Maximum Continuous Drain Current

1.9 A

Maximum Drain Source Voltage

60 V

Package Type

SOT-223

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

300 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.8 W

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

13 nC @ 10 V

Width

3.5mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.5mm

Height

1.6mm

Series

SIPMOS

Minimum Operating Temperature

-55 °C

Alkuperämaa

Malaysia

Tuotetiedot

Infineon SIPMOS® P-Channel MOSFETs

The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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€ 0,382

1 kpl (1000 kpl/kela) (ilman ALV)

€ 0,474

1 kpl (1000 kpl/kela) (Sis ALV:n)

P-Channel MOSFET Transistor, 1.9 A, 60 V, 3-Pin SOT-223 Infineon BSP171PH6327XTSA1

€ 0,382

1 kpl (1000 kpl/kela) (ilman ALV)

€ 0,474

1 kpl (1000 kpl/kela) (Sis ALV:n)

P-Channel MOSFET Transistor, 1.9 A, 60 V, 3-Pin SOT-223 Infineon BSP171PH6327XTSA1
Varastotiedot eivät ole tilapäisesti saatavilla.

Osta irtotavarana

MääräYksikköhintaPer Kela
1000 - 1000€ 0,382€ 382,00
2000 - 2000€ 0,363€ 363,00
3000+€ 0,341€ 341,00

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Tekninen dokumentti

Tekniset tiedot

Merkki

Infineon

Channel Type

P

Maximum Continuous Drain Current

1.9 A

Maximum Drain Source Voltage

60 V

Package Type

SOT-223

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

300 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.8 W

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

13 nC @ 10 V

Width

3.5mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.5mm

Height

1.6mm

Series

SIPMOS

Minimum Operating Temperature

-55 °C

Alkuperämaa

Malaysia

Tuotetiedot

Infineon SIPMOS® P-Channel MOSFETs

The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.