Infineon IRG4BC40KPBF IGBT, 42 A 600 V, 3-Pin TO-220AB, Through Hole

RS tilauskoodi: 543-0951Tuotemerkki: InfineonValmistajan osanumero.: IRG4BC40KPBF
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Tekniset tiedot

Merkki

Infineon

Maximum Continuous Collector Current

42 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Package Type

TO-220AB

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

10.54 x 4.69 x 8.77mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

Tuotetiedot

Single IGBT over 21A, Infineon

Optimised IGBTs designed for medium frequency applications with fast response and provide the user with the highest efficiency available. Utilising FRED diodes optimised to provide the best performance with IGBT's

IGBT Transistors, International Rectifier

International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.

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€ 3,10

kpl (ilman ALV)

€ 3,84

kpl (Sis ALV:n)

Infineon IRG4BC40KPBF IGBT, 42 A 600 V, 3-Pin TO-220AB, Through Hole

€ 3,10

kpl (ilman ALV)

€ 3,84

kpl (Sis ALV:n)

Infineon IRG4BC40KPBF IGBT, 42 A 600 V, 3-Pin TO-220AB, Through Hole
Varastotiedot eivät ole tilapäisesti saatavilla.

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1 - 4€ 3,10
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10 - 24€ 2,65
25 - 49€ 2,40
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Tekninen dokumentti

Tekniset tiedot

Merkki

Infineon

Maximum Continuous Collector Current

42 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Package Type

TO-220AB

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

10.54 x 4.69 x 8.77mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

Tuotetiedot

Single IGBT over 21A, Infineon

Optimised IGBTs designed for medium frequency applications with fast response and provide the user with the highest efficiency available. Utilising FRED diodes optimised to provide the best performance with IGBT's

IGBT Transistors, International Rectifier

International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.