Infineon IRG4PC50UDPBF IGBT, 55 A 600 V, 3-Pin TO-247AC, Through Hole

RS tilauskoodi: 124-8973Tuotemerkki: InfineonValmistajan osanumero.: IRG4PC50UDPBF
brand-logo
Näytä kaikki IGBTs tuotteet

Tekninen dokumentti

Tekniset tiedot

Merkki

Infineon

Maximum Continuous Collector Current

55 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Package Type

TO-247AC

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

15.87 x 5.31 x 20.7mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

Tuotetiedot

Co-Pack IGBT over 21A, Infineon

Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses.

IGBT Transistors, International Rectifier

International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.

Varastotiedot eivät ole tilapäisesti saatavilla.

Tarkista myöhemmin uudelleen.

Varastotiedot eivät ole tilapäisesti saatavilla.

€ 5,30

1 kpl (25 kpl/putki) (ilman ALV)

€ 6,572

1 kpl (25 kpl/putki) (Sis ALV:n)

Infineon IRG4PC50UDPBF IGBT, 55 A 600 V, 3-Pin TO-247AC, Through Hole

€ 5,30

1 kpl (25 kpl/putki) (ilman ALV)

€ 6,572

1 kpl (25 kpl/putki) (Sis ALV:n)

Infineon IRG4PC50UDPBF IGBT, 55 A 600 V, 3-Pin TO-247AC, Through Hole
Varastotiedot eivät ole tilapäisesti saatavilla.

Ideoi. Luo. Tee yhteistyötä

LIITY ILMAISEKSI

Ei piilokuluja!

design-spark
design-spark
  • Lataa ja käytä DesignSpark-ohjelmistoamme piirilevyjen ja 3D-mekaniikan suunnitteluun.
  • Selaa ja osallistu nettisivujen sisältöön ja keskusteluihin.
  • Lataa 3D-malleja, piirustuksia ja pohjakuvia yli miljoonasta tuotteesta.
Klikkaa tästä saadaksesi lisätietoja

Tekninen dokumentti

Tekniset tiedot

Merkki

Infineon

Maximum Continuous Collector Current

55 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Package Type

TO-247AC

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

15.87 x 5.31 x 20.7mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

Tuotetiedot

Co-Pack IGBT over 21A, Infineon

Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses.

IGBT Transistors, International Rectifier

International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.