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Merkki
IXYSMaximum Continuous Collector Current
270 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Package Type
Y3 DCB
Configuration
Single
Mounting Type
Panel Mount
Channel Type
N
Pin Count
5
Transistor Configuration
Single
Dimensions
110 x 62 x 30mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+150 °C
Tuotetiedot
IGBT Modules, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 142,00
1 kpl (2 kpl/laatikko) (ilman ALV)
€ 176,08
1 kpl (2 kpl/laatikko) (Sis ALV:n)
2
€ 142,00
1 kpl (2 kpl/laatikko) (ilman ALV)
€ 176,08
1 kpl (2 kpl/laatikko) (Sis ALV:n)
2
Osta irtotavarana
Määrä | Yksikköhinta | Per Laatikko |
---|---|---|
2 - 8 | € 142,00 | € 284,00 |
10 - 18 | € 139,00 | € 278,00 |
20+ | € 135,00 | € 270,00 |
Tekninen dokumentti
Tekniset tiedot
Merkki
IXYSMaximum Continuous Collector Current
270 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Package Type
Y3 DCB
Configuration
Single
Mounting Type
Panel Mount
Channel Type
N
Pin Count
5
Transistor Configuration
Single
Dimensions
110 x 62 x 30mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+150 °C
Tuotetiedot
IGBT Modules, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.