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IXYSMaximum Continuous Collector Current
465 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±30V
Maximum Power Dissipation
1.5 kW
Package Type
SimBus F
Configuration
Dual
Mounting Type
PCB Mount
Channel Type
N
Pin Count
11
Transistor Configuration
Series
Dimensions
152 x 62 x 17mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+150 °C
Alkuperämaa
Germany
Tuotetiedot
IGBT Modules, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Tarkista myöhemmin uudelleen.
€ 31,90
1 kpl (3 kpl/laatikko) (ilman ALV)
€ 39,556
1 kpl (3 kpl/laatikko) (Sis ALV:n)
3
€ 31,90
1 kpl (3 kpl/laatikko) (ilman ALV)
€ 39,556
1 kpl (3 kpl/laatikko) (Sis ALV:n)
3
Tekninen dokumentti
Tekniset tiedot
Merkki
IXYSMaximum Continuous Collector Current
465 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±30V
Maximum Power Dissipation
1.5 kW
Package Type
SimBus F
Configuration
Dual
Mounting Type
PCB Mount
Channel Type
N
Pin Count
11
Transistor Configuration
Series
Dimensions
152 x 62 x 17mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+150 °C
Alkuperämaa
Germany
Tuotetiedot
IGBT Modules, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.