Tekninen dokumentti
Tekniset tiedot
Merkki
NexperiaChannel Type
N, P
Maximum Continuous Drain Current
170 mA, 330 mA
Maximum Drain Source Voltage
50 V, 60 V
Package Type
SOT-666
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
3.6 Ω, 13.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
500 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
1.7mm
Typical Gate Charge @ Vgs
0.26 nC @ 5 V, 0.5 nC @ 4.5 V
Width
1.3mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
0.6mm
Tuotetiedot
Dual N/P-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 0,296
1 kpl (50 kpl/pakkaus) (ilman ALV)
€ 0,367
1 kpl (50 kpl/pakkaus) (Sis ALV:n)
50
€ 0,296
1 kpl (50 kpl/pakkaus) (ilman ALV)
€ 0,367
1 kpl (50 kpl/pakkaus) (Sis ALV:n)
50
Osta irtotavarana
Määrä | Yksikköhinta | Per Pakkaus |
---|---|---|
50 - 100 | € 0,296 | € 14,80 |
150 - 250 | € 0,18 | € 9,00 |
300 - 550 | € 0,175 | € 8,75 |
600 - 1150 | € 0,171 | € 8,55 |
1200+ | € 0,168 | € 8,40 |
Tekninen dokumentti
Tekniset tiedot
Merkki
NexperiaChannel Type
N, P
Maximum Continuous Drain Current
170 mA, 330 mA
Maximum Drain Source Voltage
50 V, 60 V
Package Type
SOT-666
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
3.6 Ω, 13.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
500 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
1.7mm
Typical Gate Charge @ Vgs
0.26 nC @ 5 V, 0.5 nC @ 4.5 V
Width
1.3mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
0.6mm
Tuotetiedot