Tekninen dokumentti
Tekniset tiedot
Merkki
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
65 A
Maximum Drain Source Voltage
650 V
Series
SuperFET III
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
40 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
417 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V ac/dc
Width
5.3mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
16.26mm
Typical Gate Charge @ Vgs
136 @ 10 V nC
Height
21.08mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Tuotetiedot
N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 10,20
kpl (ilman ALV)
€ 12,65
kpl (Sis ALV:n)
1
€ 10,20
kpl (ilman ALV)
€ 12,65
kpl (Sis ALV:n)
1
Osta irtotavarana
Määrä | Yksikköhinta |
---|---|
1 - 24 | € 10,20 |
25 - 49 | € 9,40 |
50 - 224 | € 8,60 |
225+ | € 8,00 |
Tekninen dokumentti
Tekniset tiedot
Merkki
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
65 A
Maximum Drain Source Voltage
650 V
Series
SuperFET III
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
40 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
417 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V ac/dc
Width
5.3mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
16.26mm
Typical Gate Charge @ Vgs
136 @ 10 V nC
Height
21.08mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Tuotetiedot