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SemikronMaximum Continuous Collector Current
45 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
20V
Number of Transistors
6
Package Type
SEMITOP3
Configuration
Hex
Mounting Type
Through Hole
Channel Type
N
Pin Count
36
Transistor Configuration
Six Pack
Dimensions
55 x 31 x 12mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+150 °C
Alkuperämaa
Italy
Tuotetiedot
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Tarkista myöhemmin uudelleen.
€ 74,00
kpl (ilman ALV)
€ 91,76
kpl (Sis ALV:n)
1
€ 74,00
kpl (ilman ALV)
€ 91,76
kpl (Sis ALV:n)
1
Osta irtotavarana
Määrä | Yksikköhinta |
---|---|
1 - 1 | € 74,00 |
2 - 4 | € 67,00 |
5 - 9 | € 61,50 |
10+ | € 55,00 |
Tekninen dokumentti
Tekniset tiedot
Merkki
SemikronMaximum Continuous Collector Current
45 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
20V
Number of Transistors
6
Package Type
SEMITOP3
Configuration
Hex
Mounting Type
Through Hole
Channel Type
N
Pin Count
36
Transistor Configuration
Six Pack
Dimensions
55 x 31 x 12mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+150 °C
Alkuperämaa
Italy
Tuotetiedot
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.