Semikron SKM400GB125D Dual IGBT Module, 400 A 1200 V, 7-Pin SEMITRANS3, Screw Mount

RS tilauskoodi: 125-1115Tuotemerkki: SemikronValmistajan osanumero.: SKM400GB125D
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Tekninen dokumentti

Tekniset tiedot

Merkki

Semikron

Maximum Continuous Collector Current

400 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

20V

Number of Transistors

2

Package Type

SEMITRANS3

Configuration

Dual

Mounting Type

Screw Mount

Channel Type

N

Pin Count

7

Switching Speed

12kHz

Transistor Configuration

Half Bridge

Dimensions

106.4 x 61.4 x 30.5mm

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+150 °C

Alkuperämaa

Slovakia

Tuotetiedot

Dual IGBT Modules

A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.

IGBT Modules, Semikron

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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€ 540,00

kpl (ilman ALV)

€ 669,60

kpl (Sis ALV:n)

Semikron SKM400GB125D Dual IGBT Module, 400 A 1200 V, 7-Pin SEMITRANS3, Screw Mount

€ 540,00

kpl (ilman ALV)

€ 669,60

kpl (Sis ALV:n)

Semikron SKM400GB125D Dual IGBT Module, 400 A 1200 V, 7-Pin SEMITRANS3, Screw Mount
Varastotiedot eivät ole tilapäisesti saatavilla.

Osta irtotavarana

MääräYksikköhinta
1 - 1€ 540,00
2 - 4€ 515,00
5+€ 448,00

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Tekninen dokumentti

Tekniset tiedot

Merkki

Semikron

Maximum Continuous Collector Current

400 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

20V

Number of Transistors

2

Package Type

SEMITRANS3

Configuration

Dual

Mounting Type

Screw Mount

Channel Type

N

Pin Count

7

Switching Speed

12kHz

Transistor Configuration

Half Bridge

Dimensions

106.4 x 61.4 x 30.5mm

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+150 °C

Alkuperämaa

Slovakia

Tuotetiedot

Dual IGBT Modules

A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.

IGBT Modules, Semikron

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.