Tekninen dokumentti
Tekniset tiedot
Merkki
VishayChannel Type
N
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
500 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.4 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
10.67mm
Typical Gate Charge @ Vgs
24 nC @ 10 V
Width
9.65mm
Minimum Operating Temperature
-55 °C
Height
4.83mm
Tuotetiedot
N-Channel MOSFET, 500V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 0,621
1 kpl (50 kpl/putki) (ilman ALV)
€ 0,77
1 kpl (50 kpl/putki) (Sis ALV:n)
50
€ 0,621
1 kpl (50 kpl/putki) (ilman ALV)
€ 0,77
1 kpl (50 kpl/putki) (Sis ALV:n)
50
Tekninen dokumentti
Tekniset tiedot
Merkki
VishayChannel Type
N
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
500 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.4 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
10.67mm
Typical Gate Charge @ Vgs
24 nC @ 10 V
Width
9.65mm
Minimum Operating Temperature
-55 °C
Height
4.83mm
Tuotetiedot