Tekninen dokumentti
Tekniset tiedot
Merkki
VishayChannel Type
N
Maximum Continuous Drain Current
490 mA
Maximum Drain Source Voltage
400 V
Package Type
HVMDIP
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
1.8 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
6.29mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
5mm
Typical Gate Charge @ Vgs
20 nC @ 10 V
Height
3.37mm
Minimum Operating Temperature
-55 °C
Alkuperämaa
Philippines
Tuotetiedot
N-Channel MOSFET, 300V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 1,15
1 kpl (100 kpl/putki) (ilman ALV)
€ 1,426
1 kpl (100 kpl/putki) (Sis ALV:n)
100
€ 1,15
1 kpl (100 kpl/putki) (ilman ALV)
€ 1,426
1 kpl (100 kpl/putki) (Sis ALV:n)
100
Tekninen dokumentti
Tekniset tiedot
Merkki
VishayChannel Type
N
Maximum Continuous Drain Current
490 mA
Maximum Drain Source Voltage
400 V
Package Type
HVMDIP
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
1.8 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
6.29mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
5mm
Typical Gate Charge @ Vgs
20 nC @ 10 V
Height
3.37mm
Minimum Operating Temperature
-55 °C
Alkuperämaa
Philippines
Tuotetiedot