Tekninen dokumentti
Tekniset tiedot
Merkki
VishayChannel Type
P
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
37 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.83mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
10.63mm
Typical Gate Charge @ Vgs
19 nC @ 10 V
Height
16.12mm
Minimum Operating Temperature
-55 °C
Alkuperämaa
China
Tuotetiedot
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 2,40
1 kpl (50 kpl/putki) (ilman ALV)
€ 2,976
1 kpl (50 kpl/putki) (Sis ALV:n)
50
€ 2,40
1 kpl (50 kpl/putki) (ilman ALV)
€ 2,976
1 kpl (50 kpl/putki) (Sis ALV:n)
50
Osta irtotavarana
Määrä | Yksikköhinta | Per Putki |
---|---|---|
50 - 50 | € 2,40 | € 120,00 |
100 - 200 | € 1,90 | € 95,00 |
250+ | € 1,70 | € 85,00 |
Tekninen dokumentti
Tekniset tiedot
Merkki
VishayChannel Type
P
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
37 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.83mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
10.63mm
Typical Gate Charge @ Vgs
19 nC @ 10 V
Height
16.12mm
Minimum Operating Temperature
-55 °C
Alkuperämaa
China
Tuotetiedot