Tekninen dokumentti
Tekniset tiedot
Merkki
VishayChannel Type
P
Maximum Continuous Drain Current
2.8 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-363 (SC-70)
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
1.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Typical Gate Charge @ Vgs
6.5 nC @ 4.5 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2mm
Width
1.25mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1mm
Alkuperämaa
China
Tuotetiedot
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 0,243
1 kpl (10 kpl/pakkaus) (ilman ALV)
€ 0,301
1 kpl (10 kpl/pakkaus) (Sis ALV:n)
10
€ 0,243
1 kpl (10 kpl/pakkaus) (ilman ALV)
€ 0,301
1 kpl (10 kpl/pakkaus) (Sis ALV:n)
10
Tekninen dokumentti
Tekniset tiedot
Merkki
VishayChannel Type
P
Maximum Continuous Drain Current
2.8 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-363 (SC-70)
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
1.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Typical Gate Charge @ Vgs
6.5 nC @ 4.5 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2mm
Width
1.25mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1mm
Alkuperämaa
China
Tuotetiedot