Tekninen dokumentti
Tekniset tiedot
Merkki
VishayChannel Type
P
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
20 V
Package Type
TSOP-6
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
51 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
3.6 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Width
1.7mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.1mm
Typical Gate Charge @ Vgs
34.8 nC @ 8 V
Height
1mm
Series
TrenchFET
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Tuotetiedot
P-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 0,183
1 kpl (3000 kpl/kela) (ilman ALV)
€ 0,227
1 kpl (3000 kpl/kela) (Sis ALV:n)
3000
€ 0,183
1 kpl (3000 kpl/kela) (ilman ALV)
€ 0,227
1 kpl (3000 kpl/kela) (Sis ALV:n)
3000
Osta irtotavarana
Määrä | Yksikköhinta | Per Kela |
---|---|---|
3000 - 3000 | € 0,183 | € 549,00 |
6000+ | € 0,174 | € 522,00 |
Tekninen dokumentti
Tekniset tiedot
Merkki
VishayChannel Type
P
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
20 V
Package Type
TSOP-6
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
51 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
3.6 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Width
1.7mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.1mm
Typical Gate Charge @ Vgs
34.8 nC @ 8 V
Height
1mm
Series
TrenchFET
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Tuotetiedot