Tekninen dokumentti
Tekniset tiedot
Merkki
VishayChannel Type
N
Maximum Continuous Drain Current
5.3 A
Maximum Drain Source Voltage
60 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
72 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
13 nC @ 10 V
Width
4mm
Transistor Material
Si
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
5mm
Height
1.5mm
Minimum Operating Temperature
-55 °C
Tuotetiedot
Dual N-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 0,858
kpl (toimitus kelassa) (ilman ALV)
€ 1,064
kpl (toimitus kelassa) (Sis ALV:n)
10
€ 0,858
kpl (toimitus kelassa) (ilman ALV)
€ 1,064
kpl (toimitus kelassa) (Sis ALV:n)
10
Osta irtotavarana
Määrä | Yksikköhinta | Per Kela |
---|---|---|
10 - 90 | € 0,858 | € 8,58 |
100 - 240 | € 0,806 | € 8,06 |
250 - 490 | € 0,729 | € 7,29 |
500 - 990 | € 0,686 | € 6,86 |
1000+ | € 0,645 | € 6,45 |
Tekninen dokumentti
Tekniset tiedot
Merkki
VishayChannel Type
N
Maximum Continuous Drain Current
5.3 A
Maximum Drain Source Voltage
60 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
72 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
13 nC @ 10 V
Width
4mm
Transistor Material
Si
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
5mm
Height
1.5mm
Minimum Operating Temperature
-55 °C
Tuotetiedot