Tekninen dokumentti
Tekniset tiedot
Merkki
VishayChannel Type
N
Maximum Continuous Drain Current
8.7 A
Maximum Drain Source Voltage
500 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
850 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
156 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Maximum Operating Temperature
+150 °C
Length
10.51mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Width
4.65mm
Transistor Material
Si
Number of Elements per Chip
1
Height
9.01mm
Series
D Series
Minimum Operating Temperature
-55 °C
Tuotetiedot
N-Channel MOSFET, D Series High Voltage, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 1,45
1 kpl (5 kpl/pakkaus) (ilman ALV)
€ 1,798
1 kpl (5 kpl/pakkaus) (Sis ALV:n)
5
€ 1,45
1 kpl (5 kpl/pakkaus) (ilman ALV)
€ 1,798
1 kpl (5 kpl/pakkaus) (Sis ALV:n)
5
Osta irtotavarana
Määrä | Yksikköhinta | Per Pakkaus |
---|---|---|
5 - 45 | € 1,45 | € 7,25 |
50 - 120 | € 1,30 | € 6,50 |
125 - 245 | € 1,15 | € 5,75 |
250 - 495 | € 1,05 | € 5,25 |
500+ | € 1,00 | € 5,00 |
Tekninen dokumentti
Tekniset tiedot
Merkki
VishayChannel Type
N
Maximum Continuous Drain Current
8.7 A
Maximum Drain Source Voltage
500 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
850 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
156 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Maximum Operating Temperature
+150 °C
Length
10.51mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Width
4.65mm
Transistor Material
Si
Number of Elements per Chip
1
Height
9.01mm
Series
D Series
Minimum Operating Temperature
-55 °C
Tuotetiedot