Tekninen dokumentti
Tekniset tiedot
Merkki
VishayChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
80 V
Package Type
PowerPAK SO-8
Series
TrenchFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
3.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
104 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
6.25mm
Typical Gate Charge @ Vgs
69.5 nC @ 10 V
Width
5.26mm
Number of Elements per Chip
1
Forward Diode Voltage
1.1V
Minimum Operating Temperature
-55 °C
Height
1.12mm
Tuotetiedot
N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 2,40
1 kpl (2 kpl/pakkaus) (ilman ALV)
€ 2,976
1 kpl (2 kpl/pakkaus) (Sis ALV:n)
2
€ 2,40
1 kpl (2 kpl/pakkaus) (ilman ALV)
€ 2,976
1 kpl (2 kpl/pakkaus) (Sis ALV:n)
2
Osta irtotavarana
Määrä | Yksikköhinta | Per Pakkaus |
---|---|---|
2 - 18 | € 2,40 | € 4,80 |
20 - 98 | € 2,30 | € 4,60 |
100 - 198 | € 2,05 | € 4,10 |
200 - 498 | € 1,95 | € 3,90 |
500+ | € 1,80 | € 3,60 |
Tekninen dokumentti
Tekniset tiedot
Merkki
VishayChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
80 V
Package Type
PowerPAK SO-8
Series
TrenchFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
3.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
104 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
6.25mm
Typical Gate Charge @ Vgs
69.5 nC @ 10 V
Width
5.26mm
Number of Elements per Chip
1
Forward Diode Voltage
1.1V
Minimum Operating Temperature
-55 °C
Height
1.12mm
Tuotetiedot