Tekninen dokumentti
Tekniset tiedot
Merkki
VishayChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
100 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
4.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
9.65mm
Width
10.41mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Typical Gate Charge @ Vgs
76 nC @ 10 V
Height
4.82mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.5V
Alkuperämaa
Taiwan, Province Of China
Tuotetiedot
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 3,30
1 kpl (5 kpl/pakkaus) (ilman ALV)
€ 4,092
1 kpl (5 kpl/pakkaus) (Sis ALV:n)
5
€ 3,30
1 kpl (5 kpl/pakkaus) (ilman ALV)
€ 4,092
1 kpl (5 kpl/pakkaus) (Sis ALV:n)
5
Osta irtotavarana
Määrä | Yksikköhinta | Per Pakkaus |
---|---|---|
5 - 45 | € 3,30 | € 16,50 |
50 - 120 | € 2,45 | € 12,25 |
125 - 245 | € 2,20 | € 11,00 |
250 - 495 | € 2,00 | € 10,00 |
500+ | € 1,80 | € 9,00 |
Tekninen dokumentti
Tekniset tiedot
Merkki
VishayChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
100 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
4.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
9.65mm
Width
10.41mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Typical Gate Charge @ Vgs
76 nC @ 10 V
Height
4.82mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.5V
Alkuperämaa
Taiwan, Province Of China
Tuotetiedot