Vishay VS-CPV364M4UPBF, IMS-2 , N-Channel Common Collector IGBT Module, 20 A max, 600 V, Through Hole

RS tilauskoodi: 165-2778Tuotemerkki: VishayValmistajan osanumero.: VS-CPV364M4UPBF
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Tekniset tiedot

Merkki

Vishay

Maximum Continuous Collector Current

20 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Package Type

IMS-2

Configuration

Common Collector

Mounting Type

Through Hole

Channel Type

N

Pin Count

13

Transistor Configuration

3 Phase

Dimensions

62.43 x 7.87 x 21.97mm

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+150 °C

Alkuperämaa

Italy

Tuotetiedot

IGBT Modules, Vishay

Vishay’s high-efficiency IGBT modules come with a choice of PT, NPT, and Trench IGBT technologies. The range includes single switches, inverters, choppers, half-bridges, or in custom configurations. These IGBT Modules are designed to be used as a main switching device in switch mode power supplies, uninterruptible power supplies, industrial welding, motor drives, and power factor correction systems.

Typical applications include boost and buck converters, forward and double forward converters, half bridges, full bridges (H-bridge), and three-phase bridges.

IGBT Modules, Vishay

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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€ 51,00

1 kpl (160 kpl/laatikko) (ilman ALV)

€ 63,24

1 kpl (160 kpl/laatikko) (Sis ALV:n)

Vishay VS-CPV364M4UPBF, IMS-2 , N-Channel Common Collector IGBT Module, 20 A max, 600 V, Through Hole

€ 51,00

1 kpl (160 kpl/laatikko) (ilman ALV)

€ 63,24

1 kpl (160 kpl/laatikko) (Sis ALV:n)

Vishay VS-CPV364M4UPBF, IMS-2 , N-Channel Common Collector IGBT Module, 20 A max, 600 V, Through Hole
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Tekninen dokumentti

Tekniset tiedot

Merkki

Vishay

Maximum Continuous Collector Current

20 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Package Type

IMS-2

Configuration

Common Collector

Mounting Type

Through Hole

Channel Type

N

Pin Count

13

Transistor Configuration

3 Phase

Dimensions

62.43 x 7.87 x 21.97mm

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+150 °C

Alkuperämaa

Italy

Tuotetiedot

IGBT Modules, Vishay

Vishay’s high-efficiency IGBT modules come with a choice of PT, NPT, and Trench IGBT technologies. The range includes single switches, inverters, choppers, half-bridges, or in custom configurations. These IGBT Modules are designed to be used as a main switching device in switch mode power supplies, uninterruptible power supplies, industrial welding, motor drives, and power factor correction systems.

Typical applications include boost and buck converters, forward and double forward converters, half bridges, full bridges (H-bridge), and three-phase bridges.

IGBT Modules, Vishay

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.