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VishayMaximum Continuous Collector Current
750 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
1.56 kW
Package Type
INT-A-PAK
Configuration
Series
Mounting Type
Surface Mount
Channel Type
N
Pin Count
7
Switching Speed
1kHz
Transistor Configuration
Series
Dimensions
108 x 62 x 15mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-40 °C
Alkuperämaa
China
Tuotetiedot
IGBT Modules, Vishay
Vishays high-efficiency IGBT modules come with a choice of PT, NPT, and Trench IGBT technologies. The range includes single switches, inverters, choppers, half-bridges, or in custom configurations. These IGBT Modules are designed to be used as a main switching device in switch mode power supplies, uninterruptible power supplies, industrial welding, motor drives, and power factor correction systems.
Typical applications include boost and buck converters, forward and double forward converters, half bridges, full bridges (H-bridge), and three-phase bridges.
IGBT Modules, Vishay
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Tekninen dokumentti
Tekniset tiedot
Merkki
VishayMaximum Continuous Collector Current
750 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
1.56 kW
Package Type
INT-A-PAK
Configuration
Series
Mounting Type
Surface Mount
Channel Type
N
Pin Count
7
Switching Speed
1kHz
Transistor Configuration
Series
Dimensions
108 x 62 x 15mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-40 °C
Alkuperämaa
China
Tuotetiedot
IGBT Modules, Vishay
Vishays high-efficiency IGBT modules come with a choice of PT, NPT, and Trench IGBT technologies. The range includes single switches, inverters, choppers, half-bridges, or in custom configurations. These IGBT Modules are designed to be used as a main switching device in switch mode power supplies, uninterruptible power supplies, industrial welding, motor drives, and power factor correction systems.
Typical applications include boost and buck converters, forward and double forward converters, half bridges, full bridges (H-bridge), and three-phase bridges.
IGBT Modules, Vishay
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.