Vishay VS-GB75YF120UT Dual Half Bridge IGBT Module, 100 A 1200 V, 35-Pin ECONO2, PCB Mount

RS tilauskoodi: 748-1112Tuotemerkki: VishayValmistajan osanumero.: VS-GB75YF120UT
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Tekninen dokumentti

Tekniset tiedot

Merkki

Vishay

Maximum Continuous Collector Current

100 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

480 W

Configuration

Dual Half Bridge

Package Type

ECONO2

Mounting Type

PCB Mount

Channel Type

N

Pin Count

35

Transistor Configuration

Dual Half Bridge

Length

107.8mm

Dimensions

107.8 x 45.4 x 13.2mm

Maximum Operating Temperature

+150 °C

Width

45.4mm

Alkuperämaa

Italy

Tuotetiedot

IGBT Modules, Vishay

Vishay’s high-efficiency IGBT modules come with a choice of PT, NPT, and Trench IGBT technologies. The range includes single switches, inverters, choppers, half-bridges, or in custom configurations. These IGBT Modules are designed to be used as a main switching device in switch mode power supplies, uninterruptible power supplies, industrial welding, motor drives, and power factor correction systems.

Typical applications include boost and buck converters, forward and double forward converters, half bridges, full bridges (H-bridge), and three-phase bridges.

IGBT Modules, Vishay

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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€ 222,00

kpl (ilman ALV)

€ 275,28

kpl (Sis ALV:n)

Vishay VS-GB75YF120UT Dual Half Bridge IGBT Module, 100 A 1200 V, 35-Pin ECONO2, PCB Mount
Valitse pakkaustyyppi

€ 222,00

kpl (ilman ALV)

€ 275,28

kpl (Sis ALV:n)

Vishay VS-GB75YF120UT Dual Half Bridge IGBT Module, 100 A 1200 V, 35-Pin ECONO2, PCB Mount
Varastotiedot eivät ole tilapäisesti saatavilla.
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1 - 1€ 222,00
2 - 4€ 200,00
5+€ 177,00

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Tekninen dokumentti

Tekniset tiedot

Merkki

Vishay

Maximum Continuous Collector Current

100 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

480 W

Configuration

Dual Half Bridge

Package Type

ECONO2

Mounting Type

PCB Mount

Channel Type

N

Pin Count

35

Transistor Configuration

Dual Half Bridge

Length

107.8mm

Dimensions

107.8 x 45.4 x 13.2mm

Maximum Operating Temperature

+150 °C

Width

45.4mm

Alkuperämaa

Italy

Tuotetiedot

IGBT Modules, Vishay

Vishay’s high-efficiency IGBT modules come with a choice of PT, NPT, and Trench IGBT technologies. The range includes single switches, inverters, choppers, half-bridges, or in custom configurations. These IGBT Modules are designed to be used as a main switching device in switch mode power supplies, uninterruptible power supplies, industrial welding, motor drives, and power factor correction systems.

Typical applications include boost and buck converters, forward and double forward converters, half bridges, full bridges (H-bridge), and three-phase bridges.

IGBT Modules, Vishay

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.