Tekninen dokumentti
Tekniset tiedot
Merkki
VishayMounting Type
Through Hole
Package Type
TO-247AC
Maximum Continuous Forward Current
15A
Peak Reverse Repetitive Voltage
600V
Diode Configuration
Single
Rectifier Type
Recovery Rectifier
Diode Type
Rectifier
Pin Count
2
Maximum Forward Voltage Drop
2V
Number of Elements per Chip
1
Diode Technology
Silicon Junction
Peak Reverse Recovery Time
60ns
Peak Non-Repetitive Forward Surge Current
150A
Tuotetiedot
HEXFRED® Ultrafast Recovery Rectifiers, Vishay Semiconductor
The HEXFRED® range of products from Vishay are ultrafast recovery rectifiers that contain ultrafast planar technology with a proprietary Schottky barrier based inner structure that enables soft and fast recovery behaviour at any diF/dt condition. These characteristics mean that HEXFRED® products are well suited for use as a companion diode for IGBTs and MOSFETs.
Diodes and Rectifiers, Vishay Semiconductor
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Tarkista myöhemmin uudelleen.
€ 5,10
kpl (ilman ALV)
€ 6,32
kpl (Sis ALV:n)
1
€ 5,10
kpl (ilman ALV)
€ 6,32
kpl (Sis ALV:n)
1
Osta irtotavarana
Määrä | Yksikköhinta |
---|---|
1 - 9 | € 5,10 |
10 - 49 | € 4,60 |
50 - 99 | € 4,15 |
100 - 249 | € 3,85 |
250+ | € 3,50 |
Tekninen dokumentti
Tekniset tiedot
Merkki
VishayMounting Type
Through Hole
Package Type
TO-247AC
Maximum Continuous Forward Current
15A
Peak Reverse Repetitive Voltage
600V
Diode Configuration
Single
Rectifier Type
Recovery Rectifier
Diode Type
Rectifier
Pin Count
2
Maximum Forward Voltage Drop
2V
Number of Elements per Chip
1
Diode Technology
Silicon Junction
Peak Reverse Recovery Time
60ns
Peak Non-Repetitive Forward Surge Current
150A
Tuotetiedot
HEXFRED® Ultrafast Recovery Rectifiers, Vishay Semiconductor
The HEXFRED® range of products from Vishay are ultrafast recovery rectifiers that contain ultrafast planar technology with a proprietary Schottky barrier based inner structure that enables soft and fast recovery behaviour at any diF/dt condition. These characteristics mean that HEXFRED® products are well suited for use as a companion diode for IGBTs and MOSFETs.