MOSFET Transistors

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Osan tiedot Merkki Channel Type Uutuudet Maximum Continuous Drain Current Maximum Drain Source Voltage Maximum Drain Source Resistance Maximum Gate Threshold Voltage Minimum Gate Threshold Voltage Maximum Gate Source Voltage Package Type Mounting Type Pin Count Transistor Configuration Channel Mode Category Maximum Power Dissipation Forward Transconductance Transistor Material Width Series Height Typical Turn-On Delay Time Typical Turn-Off Delay Time Typical Power Gain Dimensions Maximum Operating Temperature Forward Diode Voltage Typical Gate Charge @ Vgs Typical Input Capacitance @ Vds Number of Elements per Chip Minimum Operating Temperature Length
Infineon IRFB3306PBF N-channel MOSFET, 160 A, 60 V, 3-Pin TO-220AB Infineon N vain uudet tuotteet 160 A 60 V 4 mΩ 4V 2V ±20 V TO-220AB Through Hole 3 Single Enhancement Power MOSFET 230 W - Si 4.82mm HEXFET 9.02mm 15 ns 40 ns - 10.66 x 4.82 x 9.02mm +175 °C - 85 nC @ 10 V 4520 pF@ 50 V 1 -55 °C 10.66mm
Semikron SK85MH10T Quad N-channel MOSFET, 80 A, 100 V, 16-Pin SEMITOP2 Semikron N vain uudet tuotteet 80 A 100 V 13.5 mΩ 3.3V 2.5V ±20 V SEMITOP2 Through Hole 16 Full Bridge Enhancement - - - - 28mm SK85MH 12mm 300 ns 1550 ns - 41 x 28 x 12mm +150 °C - - - 4 -40 °C 41mm
Infineon SPP17N80C3 N-channel MOSFET, 17 A, 800 V, 3-Pin TO-220 Infineon N vain uudet tuotteet 17 A 800 V 290 mΩ 3.9V 2.1V ±20 V TO-220 Through Hole 3 Single Enhancement Power MOSFET 227 W - - 4.57mm CoolMOS C3 9.45mm 25 ns 72 ns - 10.36 x 4.57 x 9.45mm +150 °C - 88 nC @ 10 V 2300 pF @ 100 V 1 -55 °C 10.36mm
Infineon IRFB3607PBF N-channel MOSFET, 80 A, 75 V, 3-Pin TO-220AB Infineon N vain uudet tuotteet 80 A 75 V 9 mΩ 4V 2V ±20 V TO-220AB Through Hole 3 Single Enhancement Power MOSFET 140 W - Si 4.82mm HEXFET 9.02mm 16 ns 43 ns - 10.66 x 4.82 x 9.02mm +175 °C - 56 nC @ 10 V 3070 pF@ 50 V 1 -55 °C 10.66mm
Infineon IRF3205ZPBF N-channel MOSFET, 110 A, 55 V, 3-Pin TO-220AB Infineon N vain uudet tuotteet 110 A 55 V 7 mΩ 4V 2V ±20 V TO-220AB Through Hole 3 Single Enhancement Power MOSFET 170 W - Si 4.69mm HEXFET 8.77mm 18 ns 45 ns - 10.54 x 4.69 x 8.77mm +175 °C - 76 nC @ 10 V 3450 pF@ 25 V 1 -55 °C 10.54mm
Infineon IRFP4468PBF N-channel MOSFET, 290 A, 100 V, 3-Pin TO-247AC Infineon N vain uudet tuotteet 290 A 100 V 3 mΩ 4V 2V ±20 V TO-247AC Through Hole 3 Single Enhancement Power MOSFET 520 W - Si 5.31mm HEXFET 20.7mm 52 ns 160 ns - 15.87 x 5.31 x 20.7mm +175 °C - 360 nC @ 10 V 19860 pF@ 50 V 1 -55 °C 15.87mm
Infineon IRFP4668PBF N-channel MOSFET, 130 A, 200 V, 3-Pin TO-247AC Infineon N vain uudet tuotteet 130 A 200 V 10 mΩ 5V 3V ±30 V TO-247AC Through Hole 3 Single Enhancement Power MOSFET 520 W - Si 5.31mm HEXFET 20.7mm 41 ns 64 ns - 15.87 x 5.31 x 20.7mm +175 °C - 161 nC @ 10 V 10720 pF@ 50 V 1 -55 °C 15.87mm
Infineon IRFB3206PBF N-channel MOSFET, 210 A, 60 V, 3-Pin TO-220AB Infineon N vain uudet tuotteet 210 A 60 V 3 mΩ 4V 2V ±20 V TO-220AB Through Hole 3 Single Enhancement Power MOSFET 300 W - Si 4.83mm HEXFET 9.02mm 19 ns 55 ns - 10.67 x 4.83 x 9.02mm +175 °C - 120 nC @ 10 V 6540 pF@ 50 V 1 -55 °C 10.67mm
Infineon SPW47N60C3 N-channel MOSFET, 47 A, 650 V, 3-Pin TO-247 Infineon N vain uudet tuotteet 47 A 650 V 70 mΩ 3.9V 2.1V ±20 V TO-247 Through Hole 3 Single Enhancement Power MOSFET 415 W - Si 5.3mm CoolMOS C3 20.95mm 18 ns 111 ns - 15.9 x 5.3 x 20.95mm 150 °C - 252 nC @ 10 V 6800 pF @ 25 V 1 -55 °C 15.9mm
Semikron SKM180A020 N-channel MOSFET, 180 A, 200 V, 4-Pin SEMITRANSM1 Semikron N vain uudet tuotteet 180 A 200 V 11 mΩ 4V 2.1V ±20 V SEMITRANSM1 Surface Mount 4 Single Enhancement Power MOSFET - - - 42mm SKM 29mm 100 ns 900 ns - 78 x 42 x 29mm +150 °C - - 16 nF @ 25 V 1 -40 °C 78mm
Infineon BSP149 N-channel MOSFET, 660 mA, 200 V Depletion, 3-Pin SOT-223 Infineon N vain uudet tuotteet 660 mA 200 V 1.8 Ω 1V 2.1V ±20 V SOT-223 Surface Mount 3 Single Depletion Small Signal 1.8 W - Si 3.5mm SIPMOS 1.6mm 5.1 ns 45 ns - 6.5 x 3.5 x 1.6mm 150 °C - 11 nC @ 5 V 326 pF @ 25 V 1 -55 °C 6.5mm
Infineon IRFP250MPBF N-channel MOSFET, 30 A, 200 V, 3-Pin TO-247AC Infineon N vain uudet tuotteet 30 A 200 V 75 mΩ 4V 2V ±20 V TO-247AC Through Hole 3 Single Enhancement Power MOSFET 214 W - Si 5.2mm HEXFET 21.1mm 14 ns 41 ns - 16.13 x 5.2 x 21.1mm +175 °C - 123 nC @ 10 V 2159 pF @ 25 V 1 -55 °C 16.13mm
Infineon SPW20N60S5 N-channel MOSFET, 20 A, 600 V, 3-Pin TO-247 Infineon N vain uudet tuotteet 20 A 600 V 190 mΩ 5.5V 3.5V ±20 V TO-247 Through Hole 3 Single Enhancement Power MOSFET 208 W - Si 5.3mm CoolMOS S5 20.95mm 120 ns 130 ns - 15.9 x 5.3 x 20.95mm 150 °C - 79 nC @ 10 V 3000 pF @ 25 V 1 -55 °C 15.9mm
Infineon BSP295 N-channel MOSFET, 1.8 A, 60 V, 3-Pin SOT-223 Infineon N vain uudet tuotteet 1.8 A 60 V 300 mΩ 2V 0.8V ±20 V SOT-223 Surface Mount 3 Single Enhancement Small Signal 1.8 W - Si 3.5mm SIPMOS 1.6mm 5.4 ns 27 ns - 6.5 x 3.5 x 1.6mm 150 °C - 14 nC @ 10 V 295 pF @ 25 V 1 -55 °C 6.5mm
Infineon IPW60R045CP N-channel MOSFET, 60 A, 650 V, 3-Pin PG-TO-247-3-1 Infineon N vain uudet tuotteet 60 A 650 V 45 mΩ - - ±20 V PG-TO-247-3-1 Through Hole 3 Single Enhancement Power MOSFET 431 W - Si 5.21mm CoolMOS CP 21.1mm 30 ns 100 ns - 16.13 x 5.21 x 21.1mm 150 °C - 150 nC @ 10 V 6800 pF @ 100 V 1 -55 °C 16.13mm
Infineon IPW65R080CFD N-channel MOSFET, 43 A, 700 V, 3-Pin TO-247 Infineon N vain uudet tuotteet 43 A 700 V 80 mΩ - - ±30 V TO-247 Through Hole 3 Single Enhancement Power MOSFET 391 W - Si 5.21mm CoolMOS CFD 21.1mm 20 ns 85 ns - 16.13 x 5.21 x 21.1mm +150 °C 0.9V 167 nC @ 10 V 5030 pF @ 100 V 1 -55 °C 16.13mm
Infineon IPW90R120C3 N-channel MOSFET, 36 A, 900 V, 3-Pin TO-247 Infineon N vain uudet tuotteet 36 A 900 V 120 mΩ 3.5V 2.5V ±20 V TO-247 Through Hole 3 Single Enhancement Power MOSFET 417 W - Si 5.21mm CoolMOS C3 21.1mm 70 ns 400 ns - 16.13 x 5.21 x 21.1mm 150 °C - 270 nC @ 10 V 6800 pF @ 100 V 1 -55 °C 16.13mm
Infineon IRF540ZPBF N-channel MOSFET, 36 A, 100 V, 3-Pin TO-220AB Infineon N vain uudet tuotteet 36 A 100 V 27 mΩ 4V 2V ±20 V TO-220AB Through Hole 3 Single Enhancement Power MOSFET 92 W - Si 4.69mm HEXFET 8.77mm 15 ns 43 ns - 10.54 x 4.69 x 8.77mm +175 °C - 42 nC @ 10 V 1770 pF @ 25 V 1 -55 °C 10.54mm
Infineon IRFP4332PBF N-channel MOSFET, 57 A, 250 V, 3-Pin TO-247AC Infineon N vain uudet tuotteet 57 A 250 V 33 mΩ 5V 3V ±30 V TO-247AC Through Hole 3 Single Enhancement Power MOSFET 360 W - Si 5.3mm HEXFET 20.3mm - - - 15.9 x 5.3 x 20.3mm +175 °C - 99 nC @ 10 V 5860 pF@ 25 V 1 -40 °C 15.9mm
Infineon IRFP4768PBF N-channel MOSFET, 93 A, 250 V, 3-Pin TO-247AC Infineon N vain uudet tuotteet 93 A 250 V 14.5 mΩ 5V 3V ±20 V TO-247AC Through Hole 3 Single Enhancement Power MOSFET 520 W - Si 5.31mm HEXFET 20.7mm 36 ns 57 ns - 15.87 x 5.31 x 20.7mm +175 °C - 180 nC @ 10 V 10880 pF@ 50 V 1 -55 °C 15.87mm
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