MOSFET Transistors

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Osan tiedot Merkki Channel Type Maximum Continuous Drain Current Maximum Drain Source Voltage Maximum Drain Source Resistance Maximum Gate Threshold Voltage Minimum Gate Threshold Voltage Maximum Gate Source Voltage Package Type Mounting Type Pin Count Transistor Configuration Channel Mode Category Maximum Power Dissipation Typical Input Capacitance @ Vds Typical Gate Charge @ Vgs Typical Turn-Off Delay Time Dimensions Typical Turn-On Delay Time Forward Transconductance Series Height Width Length Forward Diode Voltage Typical Power Gain Maximum Operating Temperature Number of Elements per Chip Minimum Operating Temperature Transistor Material
STMicroelectronics STD60NF55LT4 N-channel MOSFET, 60 A, 55 V STripFET II, 3-Pin DPAK STMicroelectronics N 60 A 55 V 17 mΩ 2V 1V -15 V, +15 V DPAK (TO-252) Surface Mount 3 Single Enhancement Power MOSFET 110 W 1950 pF@ 25 V 40 nC @ 5 V 80 ns 6.6 x 6.2 x 2.4mm 30 ns - STripFET II 2.4mm 6.2mm 6.6mm - - +175 °C 1 -55 °C Si
ON Semiconductor NVMFS5C404NLWFAFT1G N-channel MOSFET, 370 A, 40 V NVMFS5C404NL, 4+Tab-Pin DFN ON Semiconductor N 370 A 40 V 1 mΩ 2V 1.2V ±20 V DFN Surface Mount 4+Tab Single Enhancement Power MOSFET 200 W 12168 pF @ 25 V 181 nC @ 10 V 87 ns 5.1 x 6.1 x 1.05mm 24 ns 270s NVMFS5C404NL 1.05mm 6.1mm 5.1mm 1.2V - +175 °C 1 -55 °C -
ON Semiconductor NVMFS5C604NLAFT1G N-channel MOSFET, 287 A, 60 V NVMFS5C604NL, 4+Tab-Pin DFN ON Semiconductor N 287 A 60 V 1.7 mΩ 2V 1.2V ±20 V DFN Surface Mount 4+Tab Single Enhancement Power MOSFET 200 W 8900 pF @ 25 V 120 nC @ 10 V 57.8 ns 5.1 x 6.1 x 1.05mm 21.8 ns 180s NVMFS5C604NL 1.05mm 6.1mm 5.1mm 1.2V - +175 °C 1 -55 °C -
ON Semiconductor NVMFS5C604NLWFAFT1G N-channel MOSFET, 287 A, 60 V NVMFS5C604NL, 4+Tab-Pin DFN ON Semiconductor N 287 A 60 V 1.7 mΩ 2V 1.2V ±20 V DFN Surface Mount 4+Tab Single Enhancement Power MOSFET 200 W 8900 pF @ 25 V 120 nC @ 10 V 57.8 ns 5.1 x 6.1 x 1.05mm 21.8 ns 180s NVMFS5C604NL 1.05mm 6.1mm 5.1mm 1.2V - +175 °C 1 -55 °C -
Diodes Inc DMNH4005SCT N-channel MOSFET, 150 A, 40 V DMN, 3-Pin TO220AB DiodesZetex N 150 A 40 V 4 mΩ 3V 1V 20 V TO220AB Through Hole 3 Single Enhancement - 165 W 2846 pF @ 20 V 48 @ 10 V nC 18.3 ns 10.66 x 9.01 x 4.82mm 6.6 ns - DMN 4.82mm 9.01mm 10.66mm 1.2V - +175 °C 1 -55 °C -
Diodes Inc DMNH4005SCT N-channel MOSFET, 150 A, 40 V DMN, 3-Pin TO220AB DiodesZetex N 150 A 40 V 4 mΩ 3V 1V 20 V TO220AB Through Hole 3 Single Enhancement - 165 W 2846 pF @ 20 V 48 @ 10 V nC 18.3 ns 10.66 x 9.01 x 4.82mm 6.6 ns - DMN 4.82mm 9.01mm 10.66mm 1.2V - +175 °C 1 -55 °C -
Diodes Inc DMNH4026SSD-13 N-channel MOSFET, 7.5 A, 40 V DMN, 8-Pin SO DiodesZetex N 7.5 A 40 V 32 mΩ 3V 1V ±20 V SO Surface Mount 8 - Enhancement - 2 W 1060 pF @ 20 V 19.1 @ 10 V nC 15.1 ns 4.95 X 3.95 X 1.5mm 5.3 ns - DMN 1.5mm 3.95mm 4.95mm 1V - +175 °C 1 -55 °C -
Diodes Inc DMNH4026SSD-13 N-channel MOSFET, 7.5 A, 40 V DMN, 8-Pin SO DiodesZetex N 7.5 A 40 V 32 mΩ 3V 1V ±20 V SO Surface Mount 8 - Enhancement - 2 W 1060 pF @ 20 V 19.1 @ 10 V nC 15.1 ns 4.95 X 3.95 X 1.5mm 5.3 ns - DMN 1.5mm 3.95mm 4.95mm 1V - +175 °C 1 -55 °C -
Diodes Inc DMP3007SCG-13 P-channel MOSFET, 50 A, 30 V DMP, 8-Pin V-DFN3333 DiodesZetex P 50 A 30 V 13 mΩ 3V 1V ±25 V V-DFN3333 Surface Mount 8 Single Enhancement - 2.4 W 2826 pF @ -15 V 64.2 @ 10 V nC 306 ns 3.35 x 3.35 x 0.78mm 4.8 ns - DMP 0.78mm 3.35mm 3.35mm 1.2V - +150 °C 1 -55 °C -
Diodes Inc DMP3007SCG-13 P-channel MOSFET, 50 A, 30 V DMP, 8-Pin V-DFN3333 DiodesZetex P 50 A 30 V 13 mΩ 3V 1V ±25 V V-DFN3333 Surface Mount 8 Single Enhancement - 2.4 W 2826 pF @ -15 V 64.2 @ 10 V nC 306 ns 3.35 x 3.35 x 0.78mm 4.8 ns - DMP 0.78mm 3.35mm 3.35mm 1.2V - +150 °C 1 -55 °C -
Diodes Inc DMP3007SCG-7 P-channel MOSFET, 50 A, 30 V DMP, 8-Pin V-DFN3333 DiodesZetex P 50 A 30 V 13 mΩ 3V 1V ±25 V V-DFN3333 Surface Mount 8 Single Enhancement - 2.4 W 2826 pF @ -15 V 64.2 @ 10 V nC 306 ns 3.35 x 3.35 x 0.78mm 4.8 ns - DMP 0.78mm 3.35mm 3.35mm 1.2V - +150 °C 1 -55 °C -
Diodes Inc DMP3007SCG-7 P-channel MOSFET, 50 A, 30 V DMP, 8-Pin V-DFN3333 DiodesZetex P 50 A 30 V 13 mΩ 3V 1V ±25 V V-DFN3333 Surface Mount 8 Single Enhancement - 2.4 W 2826 pF @ -15 V 64.2 @ 10 V nC 306 ns 3.35 x 3.35 x 0.78mm 4.8 ns - DMP 0.78mm 3.35mm 3.35mm 1.2V - +150 °C 1 -55 °C -
Diodes Inc DMP3007SFG-13 P-channel MOSFET, 70 A, 30 V DMP, 8-Pin POWERDI3333 DiodesZetex P 70 A 30 V 13 mΩ 3V 1V ±25 V POWERDI3333 Surface Mount 8 Single Enhancement - 2.8 W 2826 pF @ -15 V 64.2 @ 10 V nC 306 ns 3.35 x 3.35 x 0.78mm 4.3 ns - DMP 0.78mm 3.35mm 3.35mm 1.2V - +150 °C 1 -55 °C -
Diodes Inc DMP3007SFG-13 P-channel MOSFET, 70 A, 30 V DMP, 8-Pin POWERDI3333 DiodesZetex P 70 A 30 V 13 mΩ 3V 1V ±25 V POWERDI3333 Surface Mount 8 Single Enhancement - 2.8 W 2826 pF @ -15 V 64.2 @ 10 V nC 306 ns 3.35 x 3.35 x 0.78mm 4.3 ns - DMP 0.78mm 3.35mm 3.35mm 1.2V - +150 °C 1 -55 °C -
Diodes Inc DMP3007SFG-7 P-channel MOSFET, 70 A, 30 V DMP, 8-Pin POWERDI3333 DiodesZetex P 70 A 30 V 13 mΩ 3V 1V ±25 V POWERDI3333 Surface Mount 8 Single Enhancement - 2.8 W 2826 pF @ -15 V 64.2 @ 10 V nC 306 ns 3.35 x 3.35 x 0.78mm 4.3 ns - DMP 0.78mm 3.35mm 3.35mm 1.2V - +150 °C 1 -55 °C -
Diodes Inc DMP3007SFG-7 P-channel MOSFET, 70 A, 30 V DMP, 8-Pin POWERDI3333 DiodesZetex P 70 A 30 V 13 mΩ 3V 1V ±25 V POWERDI3333 Surface Mount 8 Single Enhancement - 2.8 W 2826 pF @ -15 V 64.2 @ 10 V nC 306 ns 3.35 x 3.35 x 0.78mm 4.3 ns - DMP 0.78mm 3.35mm 3.35mm 1.2V - +150 °C 1 -55 °C -
Diodes Inc DMP3007SPS-13 P-channel MOSFET, 90 A, 30 V DMP, 8-Pin DI5060 DiodesZetex P 90 A 30 V 16 mΩ 3V 1V ±25 V DI5060 Surface Mount 8 Single Enhancement - 2.7 W 2826 pF @ -15 V 64.2 @ 10 V nC 306 ns 5.1 x 6 x 1.1mm 4.8 ns - DMP 1.1mm 6mm 5.1mm 1.2V - +150 °C 1 -55 °C -
Diodes Inc DMP3007SPS-13 P-channel MOSFET, 90 A, 30 V DMP, 8-Pin DI5060 DiodesZetex P 90 A 30 V 16 mΩ 3V 1V ±25 V DI5060 Surface Mount 8 Single Enhancement - 2.7 W 2826 pF @ -15 V 64.2 @ 10 V nC 306 ns 5.1 x 6 x 1.1mm 4.8 ns - DMP 1.1mm 6mm 5.1mm 1.2V - +150 °C 1 -55 °C -
Diodes Inc DMP6110SFDF-13 P-channel MOSFET, 4.2 A, 60 V DMP, 6-Pin U-DFN2020 DiodesZetex P 4.2 A 60 V 130 mΩ 3V 1V ±20 V U-DFN2020 Surface Mount 6 Single Enhancement - 1.97 W 969 pF @ -30 V 17.2 @ 10 V nC 34 ns 2.05 x 2.05 x 0.58mm 4.4 ns - DMP 0.58mm 2.05mm 2.05mm 1.2V - +150 °C 1 -55 °C -
Diodes Inc DMP6110SFDF-13 P-channel MOSFET, 4.2 A, 60 V DMP, 6-Pin U-DFN2020 DiodesZetex P 4.2 A 60 V 130 mΩ 3V 1V ±20 V U-DFN2020 Surface Mount 6 Single Enhancement - 1.97 W 969 pF @ -30 V 17.2 @ 10 V nC 34 ns 2.05 x 2.05 x 0.58mm 4.4 ns - DMP 0.58mm 2.05mm 2.05mm 1.2V - +150 °C 1 -55 °C -
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