MOSFET Transistors

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Osan tiedot Merkki Channel Type Uutuudet Maximum Continuous Drain Current Maximum Drain Source Voltage Maximum Drain Source Resistance Maximum Gate Threshold Voltage Minimum Gate Threshold Voltage Maximum Gate Source Voltage Package Type Mounting Type Pin Count Transistor Configuration Channel Mode Category Maximum Power Dissipation Typical Input Capacitance @ Vds Typical Gate Charge @ Vgs Typical Turn-Off Delay Time Dimensions Typical Turn-On Delay Time Forward Transconductance Series Height Width Length Forward Diode Voltage Maximum Operating Temperature Number of Elements per Chip Minimum Operating Temperature Transistor Material
Vishay SUM50020E-GE3 N-channel MOSFET, 120 A, 60 V, 8-Pin TO-263
  • RS-tuotekoodi 134-9166
  • Merkki Vishay
  • Valmistajan tuotenumero SUM50020E-GE3
Vishay N Recently Introduced 120 A 60 V 2.6 mΩ 2.5V 1.2V -20 V, +20 V TO-263 Surface Mount 8 Single Enhancement Power MOSFET 375 W 11113 pF @ 30 V 126 nC @ 10 V 55 ns 10.41 x 9.65 x 4.82mm 15 ns 145s - 4.82mm 9.65mm 10.41mm 1.5V +175 °C 1 -55 °C -
Vishay SI3493DDV-T1-GE3 P-channel MOSFET, 8 A, 20 V TrenchFET, 6-Pin TSOP
  • RS-tuotekoodi 134-9155
  • Merkki Vishay
  • Valmistajan tuotenumero SI3493DDV-T1-GE3
Vishay P Recently Introduced 8 A 20 V 51 mΩ 1V 0.4V -8 V, +8 V TSOP Surface Mount 6 Single Enhancement Power MOSFET 3.6 W 1825 pF @ -10 V 34.8 nC @ 8 V 95 ns 3.1 x 1.7 x 1mm 25 ns 30s TrenchFET 1mm 1.7mm 3.1mm 1.2V +150 °C 1 -55 °C -
Vishay SI3493DDV-T1-GE3 P-channel MOSFET, 8 A, 20 V TrenchFET, 6-Pin TSOP
  • RS-tuotekoodi 134-9713
  • Merkki Vishay
  • Valmistajan tuotenumero SI3493DDV-T1-GE3
Vishay P Recently Introduced 8 A 20 V 51 mΩ 1V 0.4V -8 V, +8 V TSOP Surface Mount 6 Single Enhancement Power MOSFET 3.6 W 1825 pF @ -10 V 34.8 nC @ -8 V 95 ns 3.1 x 1.7 x 1mm 25 ns 30s TrenchFET 1mm 1.7mm 3.1mm 1.2V +150 °C 1 -55 °C -
Vishay SI5448DU-T1-GE3 N-channel MOSFET, 25 A, 40 V TrenchFET, 8-Pin PowerPAK ChipFET
  • RS-tuotekoodi 134-9156
  • Merkki Vishay
  • Valmistajan tuotenumero SI5448DU-T1-GE3
Vishay N Recently Introduced 25 A 40 V 9.47 mΩ 2.5V 1V +20 V PowerPAK ChipFET Surface Mount 8 Single Enhancement Power MOSFET 31 W 1765 pF @ 20 V 26.2 nC @ 10 V 18 ns 3 x 1.9 x 0.8mm 15 ns 80s TrenchFET 0.8mm 1.9mm 3mm 1.2V +150 °C 1 -55 °C -
Vishay SI5448DU-T1-GE3 N-channel MOSFET, 25 A, 40 V TrenchFET, 8-Pin PowerPAK ChipFET
  • RS-tuotekoodi 134-9715
  • Merkki Vishay
  • Valmistajan tuotenumero SI5448DU-T1-GE3
Vishay N Recently Introduced 25 A 40 V 9.47 mΩ 2.5V 1V +20 V PowerPAK ChipFET Surface Mount 8 Single Enhancement Power MOSFET 31 W 1765 pF @ 20 V 26.2 nC @ 10 V 18 ns 3 x 1.9 x 0.8mm 15 ns - TrenchFET 0.8mm 1.9mm 3mm 1.2V +150 °C 1 -55 °C -
Vishay SIHP065N60E-GE3 N-channel MOSFET, 40 A, 600 V E Series, 3+Tab-Pin TO-220AB
  • RS-tuotekoodi 134-9170
  • Merkki Vishay
  • Valmistajan tuotenumero SIHP065N60E-GE3
Vishay N Recently Introduced 40 A 600 V 65 mΩ 5V 3V -30 V, +30 V TO-220AB Through Hole 3+Tab Single Enhancement Power MOSFET 250 W 2750 pF @ 100 V 49 nC @ 10 V 54 ns 10.51 x 4.65 x 15.49mm 28 ns 12s E Series 15.49mm 4.65mm 10.51mm 1.2V +150 °C 1 -55 °C -
Vishay SIHP065N60E-GE3 N-channel MOSFET, 40 A, 600 V E Series, 3+Tab-Pin TO-220AB
  • RS-tuotekoodi 134-9709
  • Merkki Vishay
  • Valmistajan tuotenumero SIHP065N60E-GE3
Vishay N Recently Introduced 40 A 600 V 65 mΩ 5V 3V -30 V, +30 V TO-220AB Through Hole 3+Tab Single Enhancement Power MOSFET 250 W 2750 pF @ 100 V 49 nC @ 10 V 54 ns 10.51 x 4.65 x 15.49mm 28 ns - E Series 15.49mm 4.65mm 10.51mm 1.2V +150 °C 1 -55 °C -
Vishay SIR158DP-T1-RE3 N-channel MOSFET, 60 A, 30 V, 8-Pin SO
  • RS-tuotekoodi 134-9157
  • Merkki Vishay
  • Valmistajan tuotenumero SIR158DP-T1-RE3
Vishay N Recently Introduced 60 A 30 V 2.3 mΩ 2.5V 1.2V -20 V, +20 V SO Surface Mount 8 Single Enhancement Power MOSFET 83 W 4980 pF @ 15 V 87 nC @ 10 V 47 ns 6.25 x 5.26 x 1.12mm 28 ns 100s - 1.12mm 5.26mm 6.25mm 1.1V +150 °C 1 -55 °C -
Vishay SIR158DP-T1-RE3 N-channel MOSFET, 60 A, 30 V, 8-Pin SO
  • RS-tuotekoodi 134-9718
  • Merkki Vishay
  • Valmistajan tuotenumero SIR158DP-T1-RE3
Vishay N Recently Introduced 60 A 30 V 2.3 mΩ 2.5V 1.2V -20 V, +20 V SO Surface Mount 8 Single Enhancement Power MOSFET 83 W 4980 pF @ 15 V 87 nC @ 10 V 47 ns 6.25 x 5.26 x 1.12mm 28 ns - - 1.12mm 5.26mm 6.25mm 1.1V +150 °C 1 -55 °C -
Vishay SIR626DP-T1-RE3 N-channel MOSFET, 100 A, 60 V TrenchFET, 8-Pin SO
  • RS-tuotekoodi 134-9158
  • Merkki Vishay
  • Valmistajan tuotenumero SIR626DP-T1-RE3
Vishay N Recently Introduced 100 A 60 V 2.6 mΩ 3.4V 2V -20 V, +20 V SO Surface Mount 8 Single Enhancement Power MOSFET 104 W 5130 pF @ 30 V 68 nC @ 10 V 27 ns 6.25 x 5.26 x 1.12mm 19 ns 78S TrenchFET 1.12mm 5.26mm 6.25mm 1.1V +150 °C 1 -55 °C -
Vishay SIR626DP-T1-RE3 N-channel MOSFET, 100 A, 60 V TrenchFET, 8-Pin SO
  • RS-tuotekoodi 134-9720
  • Merkki Vishay
  • Valmistajan tuotenumero SIR626DP-T1-RE3
Vishay N Recently Introduced 100 A 60 V 2.6 mΩ 3.4V 2V -20 V, +20 V SO Surface Mount 8 Single Enhancement Power MOSFET 104 W 5130 pF @ 30 V 68 nC @ 10 V 27 ns 6.25 x 5.26 x 1.12mm 19 ns - TrenchFET 1.12mm 5.26mm 6.25mm 1.1V +150 °C 1 -55 °C -
Vishay SIR632DP-T1-RE3 N-channel MOSFET, 29 A, 150 V, 8-Pin SO
  • RS-tuotekoodi 134-9159
  • Merkki Vishay
  • Valmistajan tuotenumero SIR632DP-T1-RE3
Vishay N Recently Introduced 29 A 150 V 41 mΩ 4V 2V -20 V, +20 V SO Surface Mount 8 Single Enhancement Power MOSFET 69.5 W 740 pF @ 75 V 14 nC @ 10 V 10 ns 6.25 x 5.26 x 1.12mm 9 ns 18s - 1.12mm 5.26mm 6.25mm 1.1V +150 °C 1 -55 °C -
Vishay SIR632DP-T1-RE3 N-channel MOSFET, 29 A, 150 V, 8-Pin SO
  • RS-tuotekoodi 134-9723
  • Merkki Vishay
  • Valmistajan tuotenumero SIR632DP-T1-RE3
Vishay N Recently Introduced 29 A 150 V 41 mΩ 4V 2V -20 V, +20 V SO Surface Mount 8 Single Enhancement Power MOSFET 69.5 W 740 pF @ 75 V 14 nC @ 10 V 10 ns 6.25 x 5.26 x 1.12mm 9 ns - - 1.12mm 5.26mm 6.25mm 1.1V +150 °C 1 -55 °C -
Vishay SIR668DP-T1-RE3 N-channel MOSFET, 65 A, 100 V TrenchFET, 8-Pin SO
  • RS-tuotekoodi 134-9160
  • Merkki Vishay
  • Valmistajan tuotenumero SIR668DP-T1-RE3
Vishay N Recently Introduced 65 A 100 V 5.05 mΩ 3.4V 2V -20 V, +20 V SO Surface Mount 8 Single Enhancement Power MOSFET 104 W 5400 pF @ 50 V 72 nC @ 10 V 38 ns 6.25 x 5.26 x 1.12mm 22 ns 85s TrenchFET 1.12mm 5.26mm 6.25mm 1.1V +150 °C 1 -55 °C -
Vishay SIR668DP-T1-RE3 N-channel MOSFET, 65 A, 100 V TrenchFET, 8-Pin SO
  • RS-tuotekoodi 134-9725
  • Merkki Vishay
  • Valmistajan tuotenumero SIR668DP-T1-RE3
Vishay N Recently Introduced 65 A 100 V 5.05 mΩ 3.4V 2V -20 V, +20 V SO Surface Mount 8 Single Enhancement Power MOSFET 104 W 5400 pF @ 50 V 72 nC @ 10 V 38 ns 6.25 x 5.26 x 1.12mm 22 ns - TrenchFET 1.12mm 5.26mm 6.25mm 1.1V +150 °C 1 -55 °C -
Vishay SIR680DP-T1-RE3 N-channel MOSFET, 100 A, 80 V TrenchFET, 8-Pin SO
  • RS-tuotekoodi 134-9161
  • Merkki Vishay
  • Valmistajan tuotenumero SIR680DP-T1-RE3
Vishay N Recently Introduced 100 A 80 V 3.4 mΩ 3.4V 2V -20 V, +20 V SO Surface Mount 8 Single Enhancement Power MOSFET 104 W 5150 pF @ 40 V 69.5 nC @ 10 V 30 ns 6.25 x 5.26 x 1.12mm 28 ns 75s TrenchFET 1.12mm 5.26mm 6.25mm 1.1V +150 °C 1 -55 °C -
Vishay SIR680DP-T1-RE3 N-channel MOSFET, 100 A, 80 V TrenchFET, 8-Pin SO
  • RS-tuotekoodi 134-9727
  • Merkki Vishay
  • Valmistajan tuotenumero SIR680DP-T1-RE3
Vishay N Recently Introduced 100 A 80 V 3.4 mΩ 3.4V 2V -20 V, +20 V SO Surface Mount 8 Single Enhancement Power MOSFET 104 W 5150 pF @ 40 V 69.5 nC @ 10 V 30 ns 6.25 x 5.26 x 1.12mm 28 ns - TrenchFET 1.12mm 5.26mm 6.25mm 1.1V +150 °C 1 -55 °C -
Vishay SIR690DP-T1-RE3 N-channel MOSFET, 34.4 A, 200 V, 8-Pin SO
  • RS-tuotekoodi 134-9162
  • Merkki Vishay
  • Valmistajan tuotenumero SIR690DP-T1-RE3
Vishay N Recently Introduced 34.4 A 200 V 39 mΩ 4V 2V -20 V, +20 V SO Surface Mount 8 Single Enhancement Power MOSFET 104 W 1935 pF @ 100 V 31.9 nC @ 10 V 19 ns 6.25 x 5.26 x 1.12mm 13 ns 46s - 1.12mm 5.26mm 6.25mm 1.1V +150 °C 1 -55 °C -
Vishay SIR690DP-T1-RE3 N-channel MOSFET, 34.4 A, 200 V, 8-Pin SO
  • RS-tuotekoodi 134-9729
  • Merkki Vishay
  • Valmistajan tuotenumero SIR690DP-T1-RE3
Vishay N Recently Introduced 34.4 A 200 V 39 mΩ 4V 2V -20 V, +20 V SO Surface Mount 8 Single Enhancement Power MOSFET 104 W 1935 pF @ 100 V 31.9 nC @ 10 V 19 ns 6.25 x 5.26 x 1.12mm 13 ns - - 1.12mm 5.26mm 6.25mm 1.1V +150 °C 1 -55 °C -
Vishay SIR692DP-T1-RE3 N-channel MOSFET, 24.2 A, 250 V, 8-Pin SO
  • RS-tuotekoodi 134-9163
  • Merkki Vishay
  • Valmistajan tuotenumero SIR692DP-T1-RE3
Vishay N Recently Introduced 24.2 A 250 V 67 mΩ 4V 2V -20 V, +20 V SO Surface Mount 8 Single Enhancement Power MOSFET 104 W 1405 pF @ 125 V 25.3 nC @ 10 V 14 ns 6.25 x 5.26 x 1.12mm 13 ns 26s - 1.12mm 5.26mm 6.25mm 1.1V +150 °C 1 -55 °C -
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Näet nyt 1 - 20 kaikkiaan 720 tuloksesta