Tekninen dokumentti
Tekniset tiedot
Merkki
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
900 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
2.2 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
40 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Maximum Operating Temperature
+150 °C
Width
16.27mm
Number of Elements per Chip
1
Length
10.46mm
Typical Gate Charge @ Vgs
20.3 nC @ 10 V
Height
4.9mm
Series
DMN90H2D2HCTI
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Tuotetiedot
N-Channel MOSFET, 100V to 950V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 1,90
1 kpl (5 kpl/pakkaus) (ilman ALV)
€ 2,356
1 kpl (5 kpl/pakkaus) (Sis ALV:n)
5
€ 1,90
1 kpl (5 kpl/pakkaus) (ilman ALV)
€ 2,356
1 kpl (5 kpl/pakkaus) (Sis ALV:n)
5
Tekninen dokumentti
Tekniset tiedot
Merkki
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
900 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
2.2 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
40 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Maximum Operating Temperature
+150 °C
Width
16.27mm
Number of Elements per Chip
1
Length
10.46mm
Typical Gate Charge @ Vgs
20.3 nC @ 10 V
Height
4.9mm
Series
DMN90H2D2HCTI
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Tuotetiedot