Tekninen dokumentti
Tekniset tiedot
Merkki
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
6.5 A
Maximum Drain Source Voltage
20 V
Package Type
SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
52 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
1.6 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±12 V
Width
3.9mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
4.95mm
Typical Gate Charge @ Vgs
19 nC @ 8V
Height
1.5mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Alkuperämaa
China
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 0,175
1 kpl (2500 kpl/kela) (ilman ALV)
€ 0,217
1 kpl (2500 kpl/kela) (Sis ALV:n)
2500
€ 0,175
1 kpl (2500 kpl/kela) (ilman ALV)
€ 0,217
1 kpl (2500 kpl/kela) (Sis ALV:n)
2500
Tekninen dokumentti
Tekniset tiedot
Merkki
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
6.5 A
Maximum Drain Source Voltage
20 V
Package Type
SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
52 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
1.6 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±12 V
Width
3.9mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
4.95mm
Typical Gate Charge @ Vgs
19 nC @ 8V
Height
1.5mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Alkuperämaa
China