Tekninen dokumentti
Tekniset tiedot
Merkki
Fairchild SemiconductorMaximum Continuous Collector Current
21 A
Maximum Collector Emitter Voltage
450 V
Maximum Gate Emitter Voltage
±14V
Maximum Power Dissipation
150 W
Package Type
TO-220AB
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
10.67 x 4.7 x 16.3mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+175 °C
Tuotetiedot
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 16,75
€ 3,35 1 kpl (5 kpl/pakkaus) (ilman ALV)
€ 21,02
€ 4,204 1 kpl (5 kpl/pakkaus) (Sis ALV:n)
Standardi
5
€ 16,75
€ 3,35 1 kpl (5 kpl/pakkaus) (ilman ALV)
€ 21,02
€ 4,204 1 kpl (5 kpl/pakkaus) (Sis ALV:n)
Standardi
5
Osta irtotavarana
Määrä | Yksikköhinta | Per Pakkaus |
---|---|---|
5 - 5 | € 3,35 | € 16,75 |
10 - 95 | € 2,70 | € 13,50 |
100 - 495 | € 2,20 | € 11,00 |
500 - 995 | € 1,85 | € 9,25 |
1000+ | € 1,65 | € 8,25 |
Tekninen dokumentti
Tekniset tiedot
Merkki
Fairchild SemiconductorMaximum Continuous Collector Current
21 A
Maximum Collector Emitter Voltage
450 V
Maximum Gate Emitter Voltage
±14V
Maximum Power Dissipation
150 W
Package Type
TO-220AB
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
10.67 x 4.7 x 16.3mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+175 °C
Tuotetiedot
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.