Tekninen dokumentti
Tekniset tiedot
Merkki
InfineonChannel Type
N
Maximum Continuous Drain Current
660 mA
Maximum Drain Source Voltage
200 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.8 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.8V
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
1.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
3.5mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
6.5mm
Typical Gate Charge @ Vgs
12.9 nC @ 10 V
Height
1.6mm
Series
SIPMOS
Minimum Operating Temperature
-55 °C
Alkuperämaa
China
Tuotetiedot
Infineon SIPMOS® N-Channel MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 0,384
1 kpl (1000 kpl/kela) (ilman ALV)
€ 0,476
1 kpl (1000 kpl/kela) (Sis ALV:n)
1000
€ 0,384
1 kpl (1000 kpl/kela) (ilman ALV)
€ 0,476
1 kpl (1000 kpl/kela) (Sis ALV:n)
1000
Osta irtotavarana
Määrä | Yksikköhinta | Per Kela |
---|---|---|
1000 - 1000 | € 0,384 | € 384,00 |
2000 - 2000 | € 0,364 | € 364,00 |
3000+ | € 0,342 | € 342,00 |
Tekninen dokumentti
Tekniset tiedot
Merkki
InfineonChannel Type
N
Maximum Continuous Drain Current
660 mA
Maximum Drain Source Voltage
200 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.8 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.8V
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
1.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
3.5mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
6.5mm
Typical Gate Charge @ Vgs
12.9 nC @ 10 V
Height
1.6mm
Series
SIPMOS
Minimum Operating Temperature
-55 °C
Alkuperämaa
China
Tuotetiedot
Infineon SIPMOS® N-Channel MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.