Tekninen dokumentti
Tekniset tiedot
Merkki
NXPChannel Type
N
Idss Drain-Source Cut-off Current
12 to 25mA
Maximum Drain Source Voltage
25 V
Maximum Gate Source Voltage
+25 V
Maximum Drain Gate Voltage
25V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23 (TO-236AB)
Pin Count
3
Dimensions
3 x 1.4 x 1mm
Minimum Operating Temperature
-65 °C
Height
1mm
Maximum Operating Temperature
+150 °C
Length
3mm
Width
1.4mm
Alkuperämaa
China
Tuotetiedot
N-channel JFET, NXP
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 0,358
kpl (toimitus kelassa) (ilman ALV)
€ 0,444
kpl (toimitus kelassa) (Sis ALV:n)
10
€ 0,358
kpl (toimitus kelassa) (ilman ALV)
€ 0,444
kpl (toimitus kelassa) (Sis ALV:n)
10
Osta irtotavarana
Määrä | Yksikköhinta | Per Kela |
---|---|---|
10 - 90 | € 0,358 | € 3,58 |
100 - 240 | € 0,282 | € 2,82 |
250 - 990 | € 0,249 | € 2,49 |
1000+ | € 0,20 | € 2,00 |
Tekninen dokumentti
Tekniset tiedot
Merkki
NXPChannel Type
N
Idss Drain-Source Cut-off Current
12 to 25mA
Maximum Drain Source Voltage
25 V
Maximum Gate Source Voltage
+25 V
Maximum Drain Gate Voltage
25V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23 (TO-236AB)
Pin Count
3
Dimensions
3 x 1.4 x 1mm
Minimum Operating Temperature
-65 °C
Height
1mm
Maximum Operating Temperature
+150 °C
Length
3mm
Width
1.4mm
Alkuperämaa
China
Tuotetiedot
N-channel JFET, NXP
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.