Tekninen dokumentti
Tekniset tiedot
Merkki
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
8 to 80mA
Maximum Drain Source Voltage
0.4 V
Maximum Gate Source Voltage
-40 V
Maximum Drain Gate Voltage
40V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Dimensions
2.9 x 1.3 x 0.97mm
Maximum Operating Temperature
+150 °C
Length
2.9mm
Height
0.97mm
Width
1.3mm
Tuotetiedot
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 0,179
1 kpl (100 kpl/pakkaus) (ilman ALV)
€ 0,225
1 kpl (100 kpl/pakkaus) (Sis ALV:n)
Standardi
100
€ 0,179
1 kpl (100 kpl/pakkaus) (ilman ALV)
€ 0,225
1 kpl (100 kpl/pakkaus) (Sis ALV:n)
Standardi
100
Osta irtotavarana
Määrä | Yksikköhinta | Per Pakkaus |
---|---|---|
100 - 400 | € 0,179 | € 17,90 |
500 - 900 | € 0,154 | € 15,40 |
1000+ | € 0,134 | € 13,40 |
Tekninen dokumentti
Tekniset tiedot
Merkki
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
8 to 80mA
Maximum Drain Source Voltage
0.4 V
Maximum Gate Source Voltage
-40 V
Maximum Drain Gate Voltage
40V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Dimensions
2.9 x 1.3 x 0.97mm
Maximum Operating Temperature
+150 °C
Length
2.9mm
Height
0.97mm
Width
1.3mm
Tuotetiedot
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.