Tekninen dokumentti
Tekniset tiedot
Merkki
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
8 to 80mA
Maximum Drain Source Voltage
0.4 V
Maximum Gate Source Voltage
-40 V
Maximum Drain Gate Voltage
40V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Dimensions
2.9 x 1.3 x 0.97mm
Maximum Operating Temperature
+150 °C
Length
2.9mm
Height
0.97mm
Width
1.3mm
Tuotetiedot
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 18,00
€ 0,18 1 kpl (100 kpl/pakkaus) (ilman ALV)
€ 22,59
€ 0,226 1 kpl (100 kpl/pakkaus) (Sis ALV:n)
Standardi
100
€ 18,00
€ 0,18 1 kpl (100 kpl/pakkaus) (ilman ALV)
€ 22,59
€ 0,226 1 kpl (100 kpl/pakkaus) (Sis ALV:n)
Standardi
100
Osta irtotavarana
Määrä | Yksikköhinta | Per Pakkaus |
---|---|---|
100 - 400 | € 0,18 | € 18,00 |
500 - 900 | € 0,155 | € 15,50 |
1000+ | € 0,135 | € 13,50 |
Tekninen dokumentti
Tekniset tiedot
Merkki
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
8 to 80mA
Maximum Drain Source Voltage
0.4 V
Maximum Gate Source Voltage
-40 V
Maximum Drain Gate Voltage
40V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Dimensions
2.9 x 1.3 x 0.97mm
Maximum Operating Temperature
+150 °C
Length
2.9mm
Height
0.97mm
Width
1.3mm
Tuotetiedot
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.