Dual N/P-Channel-Channel MOSFET, 600 mA, 700 mA, 20 V, 6-Pin SOT-363 (SC-70) onsemi FDG6332C-F085
Tekninen dokumentti
Tekniset tiedot
Merkki
onsemiChannel Type
N, P
Maximum Continuous Drain Current
600 mA, 700 mA
Maximum Drain Source Voltage
20 V
Series
PowerTrench
Package Type
SOT-363 (SC-70)
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
700 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.3V
Maximum Power Dissipation
300 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-12 V, +12 V
Width
1.25mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
2mm
Typical Gate Charge @ Vgs
1.1 nC @ 4.5 V, 1.4 nC @ 4.5 V
Height
1mm
Minimum Operating Temperature
-55 °C
Alkuperämaa
United States
Tuotetiedot
PowerTrench® Dual N/P-Channel MOSFET, Fairchild Semiconductor
PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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Tarkista myöhemmin uudelleen.
€ 423,00
€ 0,141 1 kpl (3000 kpl/kela) (ilman ALV)
€ 530,86
€ 0,177 1 kpl (3000 kpl/kela) (Sis ALV:n)
3000
€ 423,00
€ 0,141 1 kpl (3000 kpl/kela) (ilman ALV)
€ 530,86
€ 0,177 1 kpl (3000 kpl/kela) (Sis ALV:n)
3000
Ideoi. Luo. Tee yhteistyötä
LIITY ILMAISEKSI
Ei piilokuluja!
- Lataa ja käytä DesignSpark-ohjelmistoamme piirilevyjen ja 3D-mekaniikan suunnitteluun.
- Selaa ja osallistu nettisivujen sisältöön ja keskusteluihin.
- Lataa 3D-malleja, piirustuksia ja pohjakuvia yli miljoonasta tuotteesta.
Tekninen dokumentti
Tekniset tiedot
Merkki
onsemiChannel Type
N, P
Maximum Continuous Drain Current
600 mA, 700 mA
Maximum Drain Source Voltage
20 V
Series
PowerTrench
Package Type
SOT-363 (SC-70)
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
700 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.3V
Maximum Power Dissipation
300 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-12 V, +12 V
Width
1.25mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
2mm
Typical Gate Charge @ Vgs
1.1 nC @ 4.5 V, 1.4 nC @ 4.5 V
Height
1mm
Minimum Operating Temperature
-55 °C
Alkuperämaa
United States
Tuotetiedot
PowerTrench® Dual N/P-Channel MOSFET, Fairchild Semiconductor
PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Ideoi. Luo. Tee yhteistyötä
LIITY ILMAISEKSI
Ei piilokuluja!
- Lataa ja käytä DesignSpark-ohjelmistoamme piirilevyjen ja 3D-mekaniikan suunnitteluun.
- Selaa ja osallistu nettisivujen sisältöön ja keskusteluihin.
- Lataa 3D-malleja, piirustuksia ja pohjakuvia yli miljoonasta tuotteesta.