Tekninen dokumentti
Tekniset tiedot
Merkki
onsemiChannel Type
N
Maximum Continuous Drain Current
76 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
8.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
107 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
4.67mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.36mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Height
15.21mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Alkuperämaa
China
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 1,70
1 kpl (800 kpl/putki) (ilman ALV)
€ 2,108
1 kpl (800 kpl/putki) (Sis ALV:n)
800
€ 1,70
1 kpl (800 kpl/putki) (ilman ALV)
€ 2,108
1 kpl (800 kpl/putki) (Sis ALV:n)
800
Osta irtotavarana
Määrä | Yksikköhinta | Per Putki |
---|---|---|
800 - 800 | € 1,70 | € 1 360,00 |
1600 - 2400 | € 1,50 | € 1 200,00 |
3200 - 4800 | € 1,45 | € 1 160,00 |
5600+ | € 1,40 | € 1 120,00 |
Tekninen dokumentti
Tekniset tiedot
Merkki
onsemiChannel Type
N
Maximum Continuous Drain Current
76 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
8.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
107 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
4.67mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.36mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Height
15.21mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Alkuperämaa
China