Tekninen dokumentti
Tekniset tiedot
Merkki
onsemiChannel Type
N
Maximum Continuous Drain Current
68 A
Maximum Drain Source Voltage
80 V
Package Type
WDFN
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
9.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
107 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Length
3.15mm
Typical Gate Charge @ Vgs
3.6 nC @ 10 V
Width
3.15mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Height
0.75mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Alkuperämaa
Malaysia
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 0,898
1 kpl (1500 kpl/kela) (ilman ALV)
€ 1,114
1 kpl (1500 kpl/kela) (Sis ALV:n)
1500
€ 0,898
1 kpl (1500 kpl/kela) (ilman ALV)
€ 1,114
1 kpl (1500 kpl/kela) (Sis ALV:n)
1500
Tekninen dokumentti
Tekniset tiedot
Merkki
onsemiChannel Type
N
Maximum Continuous Drain Current
68 A
Maximum Drain Source Voltage
80 V
Package Type
WDFN
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
9.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
107 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Length
3.15mm
Typical Gate Charge @ Vgs
3.6 nC @ 10 V
Width
3.15mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Height
0.75mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Alkuperämaa
Malaysia