Tekninen dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
23 A
Maximum Drain Source Voltage
100 V
Package Type
DPAK (TO-252)
Series
STripFET
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
80 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
70 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
6.6mm
Typical Gate Charge @ Vgs
30 nC @ 10 V
Width
6.2mm
Number of Elements per Chip
1
Height
2.4mm
Minimum Operating Temperature
-55 °C
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 0,571
1 kpl (2500 kpl/kela) (ilman ALV)
€ 0,717
1 kpl (2500 kpl/kela) (Sis ALV:n)
2500
€ 0,571
1 kpl (2500 kpl/kela) (ilman ALV)
€ 0,717
1 kpl (2500 kpl/kela) (Sis ALV:n)
2500
Tekninen dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
23 A
Maximum Drain Source Voltage
100 V
Package Type
DPAK (TO-252)
Series
STripFET
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
80 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
70 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
6.6mm
Typical Gate Charge @ Vgs
30 nC @ 10 V
Width
6.2mm
Number of Elements per Chip
1
Height
2.4mm
Minimum Operating Temperature
-55 °C