Tekninen dokumentti
Tekniset tiedot
Merkki
Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
70 A
Maximum Drain Source Voltage
60 V
Package Type
TO-252
Mounting Type
Surface Mount
Pin Count
3 + Tab
Maximum Drain Source Resistance
15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Maximum Operating Temperature
+150 °C
Length
6.57mm
Typical Gate Charge @ Vgs
18 nC @ 4.5 V, 37 nC @ 10 V
Width
6.11mm
Number of Elements per Chip
1
Height
2.29mm
Forward Diode Voltage
1V
Minimum Operating Temperature
-55 °C
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 0,626
1 kpl (25 kpl/pakkaus) (ilman ALV)
€ 0,776
1 kpl (25 kpl/pakkaus) (Sis ALV:n)
25
€ 0,626
1 kpl (25 kpl/pakkaus) (ilman ALV)
€ 0,776
1 kpl (25 kpl/pakkaus) (Sis ALV:n)
25
Osta irtotavarana
Määrä | Yksikköhinta | Per Pakkaus |
---|---|---|
25 - 25 | € 0,626 | € 15,65 |
50 - 75 | € 0,542 | € 13,55 |
100 - 475 | € 0,475 | € 11,88 |
500+ | € 0,417 | € 10,42 |
Tekninen dokumentti
Tekniset tiedot
Merkki
Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
70 A
Maximum Drain Source Voltage
60 V
Package Type
TO-252
Mounting Type
Surface Mount
Pin Count
3 + Tab
Maximum Drain Source Resistance
15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Maximum Operating Temperature
+150 °C
Length
6.57mm
Typical Gate Charge @ Vgs
18 nC @ 4.5 V, 37 nC @ 10 V
Width
6.11mm
Number of Elements per Chip
1
Height
2.29mm
Forward Diode Voltage
1V
Minimum Operating Temperature
-55 °C