Tekninen dokumentti
Tekniset tiedot
Merkki
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
30 V
Series
FemtoFET
Package Type
PICOSTAR
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
270 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Width
0.64mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
1.04mm
Typical Gate Charge @ Vgs
1570 nC @ 0 V
Height
0.2mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
0.9V
Tuotetiedot
N-Channel FemtoFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 0,158
1 kpl (250 kpl/kela) (ilman ALV)
€ 0,196
1 kpl (250 kpl/kela) (Sis ALV:n)
250
€ 0,158
1 kpl (250 kpl/kela) (ilman ALV)
€ 0,196
1 kpl (250 kpl/kela) (Sis ALV:n)
250
Tekninen dokumentti
Tekniset tiedot
Merkki
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
30 V
Series
FemtoFET
Package Type
PICOSTAR
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
270 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Width
0.64mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
1.04mm
Typical Gate Charge @ Vgs
1570 nC @ 0 V
Height
0.2mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
0.9V
Tuotetiedot