N-Channel MOSFET, 349 A, 60 V, 3-Pin D2PAK Texas Instruments CSD18536KTTT
Tekninen dokumentti
Tekniset tiedot
Merkki
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
349 A
Maximum Drain Source Voltage
60 V
Package Type
D2PAK (TO-263)
Series
NexFET
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1.4V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Length
10.67mm
Typical Gate Charge @ Vgs
230 nC @ 10 V
Width
11.33mm
Number of Elements per Chip
1
Forward Diode Voltage
1V
Height
4.83mm
Minimum Operating Temperature
-55 °C
Tuotetiedot
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
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€ 5,30
kpl (ilman ALV)
€ 6,57
kpl (Sis ALV:n)
1
€ 5,30
kpl (ilman ALV)
€ 6,57
kpl (Sis ALV:n)
1
Osta irtotavarana
Määrä | Yksikköhinta |
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1 - 9 | € 5,30 |
10 - 49 | € 4,60 |
50 - 249 | € 4,05 |
250 - 499 | € 3,30 |
500+ | € 2,95 |
Tekninen dokumentti
Tekniset tiedot
Merkki
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
349 A
Maximum Drain Source Voltage
60 V
Package Type
D2PAK (TO-263)
Series
NexFET
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1.4V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Length
10.67mm
Typical Gate Charge @ Vgs
230 nC @ 10 V
Width
11.33mm
Number of Elements per Chip
1
Forward Diode Voltage
1V
Height
4.83mm
Minimum Operating Temperature
-55 °C
Tuotetiedot