Tekninen dokumentti
Tekniset tiedot
Merkki
ToshibaChannel Type
N
Idss Drain-Source Cut-off Current
1.2 to 3.0mA
Maximum Drain Source Voltage
10 V
Maximum Gate Source Voltage
-30 V
Maximum Drain Gate Voltage
-50V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-346 (SC-59)
Pin Count
3
Dimensions
2.9 x 1.5 x 1.1mm
Maximum Operating Temperature
+125 °C
Length
2.9mm
Minimum Operating Temperature
-55 °C
Height
1.1mm
Width
1.5mm
Tuotetiedot
N-channel JFET, Toshiba
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 0,395
1 kpl (10 kpl/pakkaus) (ilman ALV)
€ 0,496
1 kpl (10 kpl/pakkaus) (Sis ALV:n)
Standardi
10
€ 0,395
1 kpl (10 kpl/pakkaus) (ilman ALV)
€ 0,496
1 kpl (10 kpl/pakkaus) (Sis ALV:n)
Standardi
10
Osta irtotavarana
Määrä | Yksikköhinta | Per Pakkaus |
---|---|---|
10 - 90 | € 0,395 | € 3,95 |
100+ | € 0,248 | € 2,48 |
Tekninen dokumentti
Tekniset tiedot
Merkki
ToshibaChannel Type
N
Idss Drain-Source Cut-off Current
1.2 to 3.0mA
Maximum Drain Source Voltage
10 V
Maximum Gate Source Voltage
-30 V
Maximum Drain Gate Voltage
-50V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-346 (SC-59)
Pin Count
3
Dimensions
2.9 x 1.5 x 1.1mm
Maximum Operating Temperature
+125 °C
Length
2.9mm
Minimum Operating Temperature
-55 °C
Height
1.1mm
Width
1.5mm
Tuotetiedot
N-channel JFET, Toshiba
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.