Phototransistors
A Phototransistor is a two-lead or three-lead semiconductor that is more sensitive than a photodiode. It senses light levels and uses them to alter currents to create an electrical signal.
The bipolar semiconductor is can be made from silicon or another semi-conductive material.
How do Phototransistors work?
Once detection of light such as IR (infrared), visible light or UV (U...
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Wurth Elektronik
Infrared, Visible Light
Infrared, Visible Light
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-
-
100 (Collector Emitter)nA
150 °
NPN
2
Surface Mount
0603
1.6 x 0.8 x 0.8mm
20mA
-
1100nm
400 → 1100 nm
400nm
5V
-
35V
-
WL-STCW
1.6mm
0.8mm
0.8mm
Vishay
Near Infrared Radiation, Visible Infrared Radiation
Near Infrared Radiation, Visible Infrared Radiation
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-
9mA
-
15 °
-
2
Surface Mount
GW
-
-
-
-
-
-
-
-
-
-
VEMT
-
-
-
Wurth Elektronik
Infrared
Infrared
-
-
-
100 (Collector Emitter)nA
120 °
NPN
2
Surface Mount
3528
3.5 x 2.8 x 1.9mm
20mA
-
1100nm
700 → 1100 nm
700nm
5V
-
35V
PLCC
WL-STTB
3.5mm
2.8mm
1.9mm
Wurth Elektronik
Infrared
Infrared
-
-
-
100 (Collector Emitter)nA
140 °
NPN
2
Surface Mount
1206
3.2 x 1.6 x 1.1mm
20mA
-
1100nm
700 → 1100 nm
700nm
5V
-
30V
-
WL-STCB
3.2mm
1.6mm
1.1mm
onsemi
-
Infrared
7µs
7µs
-
100nA
±12 °
-
2
Through Hole
T-1 3/4
6.1 Dia. x 8.77mm
39mA
6.1mm
880nm
880 nm
-
5V
0.4V
30V
Phototransistor
-
-
-
8.77mm
Wurth Elektronik
Infrared, Visible Light
Infrared, Visible Light
-
-
-
100 (Collector Emitter)nA
120 °
NPN
2
Surface Mount
3528
3.5 x 2.8 x 1.9mm
20mA
-
1100nm
400 → 1100 nm
400nm
5V
-
35V
PLCC
WL-STTW
3.5mm
2.8mm
1.9mm
Wurth Elektronik
Infrared
Infrared
-
-
-
100 (Collector Emitter)nA
30 °
NPN
2
Surface Mount
1206
3.2 x 1.6 x 1.85mm
20mA
-
1100nm
700 → 1100 nm
700nm
5V
-
30V
-
WL-STRB
3.2mm
1.6mm
1.85mm
onsemi
Infrared
Infrared
50µs
10µs
-
100nA
-
-
4
Through Hole
Custom 4L
4.39 x 6.1 x 4.65mm
0.3 (Minimum)mA
-
940nm
940 nm
-
5V
0.4V
30V
Phototransistor
-
4.39mm
6.1mm
4.65mm
€ 0,576
1 kpl (25 kpl/pakkaus) (ilman ALV)
Tarkista saatavuus
25
Wurth Elektronik
-
Infrared
-
-
-
100 (Collector Emitter)nA
30 °
NPN
2
Surface Mount
1206
3.2 x 1.6 x 1.85mm
20mA
-
1100nm
700 → 1100 nm
700nm
5V
-
30V
-
WL-STRB
3.2mm
1.6mm
1.85mm
€ 1,694
1 kpl (10 kpl/pakkaus) (ilman ALV)
Tarkista saatavuus
10
onsemi
Infrared
Infrared
50µs
10µs
-
100nA
-
-
4
Through Hole
Custom 4L
4.39 x 6.1 x 4.65mm
1 (Minimum)mA
-
940nm
940 nm
-
5V
0.4V
30V
Phototransistor
-
4.39mm
6.1mm
4.65mm
onsemi
Infrared
Infrared
50µs
10µs
-
100nA
-
-
4
Through Hole
Custom 4L
4.39 x 6.1 x 4.65mm
1 (Minimum)mA
-
940nm
940 nm
-
5V
0.4V
30V
Phototransistor
-
4.39mm
6.1mm
4.65mm
€ 1,757
1 kpl (10 kpl/pakkaus) (ilman ALV)
Tarkista saatavuus
10
onsemi
Infrared
Infrared
50µs
10µs
-
100nA
-
-
4
Through Hole
Custom 4L
4.39 x 6.1 x 4.65mm
0.3 (Minimum)mA
-
940nm
940 nm
-
5V
0.4V
30V
Phototransistor
-
4.39mm
6.1mm
4.65mm
€ 1,443
1 kpl (5 kpl/pakkaus) (ilman ALV)
Tarkista saatavuus
5
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