Tekninen dokumentti
Tekniset tiedot
Merkki
ams OSRAMSpectrums Detected
Infrared, Ultraviolet, Visible Light
Number of Channels
1
Maximum Light Current
8µA
Maximum Dark Current
3nA
Angle of Half Sensitivity
150 °
Polarity
NPN
Number of Pins
2
Mounting Type
Through Hole
Package Type
3mm (T-1)
Dimensions
4 x 4 x 3.1mm
Collector Current
20mA
Maximum Wavelength Detected
940nm
Spectral Range of Sensitivity
350 → 940 nm
Minimum Wavelength Detected
350nm
Length
4mm
Width
4mm
Height
3.1mm
Tuotetiedot
Ambient Light Sensors - Vlambda
A range of NPN silicon phototransistors from OSRAM Opto Semiconductors, with improved V lambda characteristics. These compact phototransistors are suitable for a wide range of applications including; ambient light detectors, exposure meters for both daylight and artificial light, sensor for backlight dimming and for control and drive circuits.
Ambient Light Sensors, OSRAM Opto Semiconductors
€ 17,92
€ 0,896 kpl (toimitus teipissä) (ilman ALV)
€ 22,49
€ 1,124 kpl (toimitus teipissä) (Sis ALV:n)
Tuotantopakkaus (Nauha)
20
€ 17,92
€ 0,896 kpl (toimitus teipissä) (ilman ALV)
€ 22,49
€ 1,124 kpl (toimitus teipissä) (Sis ALV:n)
Varastotiedot eivät ole tilapäisesti saatavilla.
Tuotantopakkaus (Nauha)
20
Varastotiedot eivät ole tilapäisesti saatavilla.
Määrä | Yksikköhinta | Per Nauha |
---|---|---|
20 - 95 | € 0,896 | € 4,48 |
100 - 495 | € 0,626 | € 3,13 |
500 - 995 | € 0,475 | € 2,38 |
1000+ | € 0,392 | € 1,96 |
Tekninen dokumentti
Tekniset tiedot
Merkki
ams OSRAMSpectrums Detected
Infrared, Ultraviolet, Visible Light
Number of Channels
1
Maximum Light Current
8µA
Maximum Dark Current
3nA
Angle of Half Sensitivity
150 °
Polarity
NPN
Number of Pins
2
Mounting Type
Through Hole
Package Type
3mm (T-1)
Dimensions
4 x 4 x 3.1mm
Collector Current
20mA
Maximum Wavelength Detected
940nm
Spectral Range of Sensitivity
350 → 940 nm
Minimum Wavelength Detected
350nm
Length
4mm
Width
4mm
Height
3.1mm
Tuotetiedot
Ambient Light Sensors - Vlambda
A range of NPN silicon phototransistors from OSRAM Opto Semiconductors, with improved V lambda characteristics. These compact phototransistors are suitable for a wide range of applications including; ambient light detectors, exposure meters for both daylight and artificial light, sensor for backlight dimming and for control and drive circuits.