Tekninen dokumentti
Tekniset tiedot
Merkki
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
10.4 A
Maximum Drain Source Voltage
60 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
80 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
10.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
7.67mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.73mm
Typical Gate Charge @ Vgs
23 nC @ 5 V
Maximum Operating Temperature
+150 °C
Height
2.39mm
Minimum Operating Temperature
-55 °C
Alkuperämaa
China
Tuotetiedot
P-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
€ 2 077,50
€ 0,831 1 kpl (2500 kpl/kela) (ilman ALV)
€ 2 607,26
€ 1,043 1 kpl (2500 kpl/kela) (Sis ALV:n)
2500
€ 2 077,50
€ 0,831 1 kpl (2500 kpl/kela) (ilman ALV)
€ 2 607,26
€ 1,043 1 kpl (2500 kpl/kela) (Sis ALV:n)
2500
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Tekninen dokumentti
Tekniset tiedot
Merkki
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
10.4 A
Maximum Drain Source Voltage
60 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
80 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
10.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
7.67mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.73mm
Typical Gate Charge @ Vgs
23 nC @ 5 V
Maximum Operating Temperature
+150 °C
Height
2.39mm
Minimum Operating Temperature
-55 °C
Alkuperämaa
China
Tuotetiedot