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Tekniset tiedot
Merkki
InfineonChannel Type
P
Maximum Continuous Drain Current
90 A
Maximum Drain Source Voltage
40 V
Series
OptiMOS P
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
6.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +16 V
Number of Elements per Chip
1
Length
6.73mm
Typical Gate Charge @ Vgs
135 nC @ 10 V
Maximum Operating Temperature
+175 °C
Width
6.22mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
2.41mm
Tuotetiedot
Infineon OptiMOS™P P-Channel Power MOSFETs
The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
€ 94,00
€ 2,35 kpl (toimitus kelassa) (ilman ALV)
€ 117,97
€ 2,949 kpl (toimitus kelassa) (Sis ALV:n)
Tuotantopakkaus (Kela)
40
€ 94,00
€ 2,35 kpl (toimitus kelassa) (ilman ALV)
€ 117,97
€ 2,949 kpl (toimitus kelassa) (Sis ALV:n)
Tuotantopakkaus (Kela)
40
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
Määrä | Yksikköhinta | Per Kela |
---|---|---|
40 - 80 | € 2,35 | € 47,00 |
100 - 180 | € 2,25 | € 45,00 |
200 - 480 | € 2,15 | € 43,00 |
500+ | € 2,00 | € 40,00 |
Tekninen dokumentti
Tekniset tiedot
Merkki
InfineonChannel Type
P
Maximum Continuous Drain Current
90 A
Maximum Drain Source Voltage
40 V
Series
OptiMOS P
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
6.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +16 V
Number of Elements per Chip
1
Length
6.73mm
Typical Gate Charge @ Vgs
135 nC @ 10 V
Maximum Operating Temperature
+175 °C
Width
6.22mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
2.41mm
Tuotetiedot
Infineon OptiMOS™P P-Channel Power MOSFETs
The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.