Tekninen dokumentti
Tekniset tiedot
Merkki
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
75 A
Maximum Drain Source Voltage
40 V
Series
TrenchFET
Package Type
PowerPAK SO-8L
Mounting Type
Surface Mount
Pin Count
4
Maximum Drain Source Resistance
5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
66 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Length
5.99mm
Typical Gate Charge @ Vgs
66 nC @ 10 V
Maximum Operating Temperature
+175 °C
Width
5mm
Transistor Material
Si
Automotive Standard
AEC-Q101
Height
1.07mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Alkuperämaa
China
€ 10,50
€ 1,05 1 kpl (10 kpl/pakkaus) (ilman ALV)
€ 13,18
€ 1,318 1 kpl (10 kpl/pakkaus) (Sis ALV:n)
Standardi
10
€ 10,50
€ 1,05 1 kpl (10 kpl/pakkaus) (ilman ALV)
€ 13,18
€ 1,318 1 kpl (10 kpl/pakkaus) (Sis ALV:n)
Varastotiedot eivät ole tilapäisesti saatavilla.
Standardi
10
Varastotiedot eivät ole tilapäisesti saatavilla.
Määrä | Yksikköhinta | Per Pakkaus |
---|---|---|
10 - 90 | € 1,05 | € 10,50 |
100 - 490 | € 0,794 | € 7,94 |
500 - 990 | € 0,674 | € 6,74 |
1000+ | € 0,581 | € 5,81 |
Tekninen dokumentti
Tekniset tiedot
Merkki
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
75 A
Maximum Drain Source Voltage
40 V
Series
TrenchFET
Package Type
PowerPAK SO-8L
Mounting Type
Surface Mount
Pin Count
4
Maximum Drain Source Resistance
5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
66 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Length
5.99mm
Typical Gate Charge @ Vgs
66 nC @ 10 V
Maximum Operating Temperature
+175 °C
Width
5mm
Transistor Material
Si
Automotive Standard
AEC-Q101
Height
1.07mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Alkuperämaa
China