Tekninen dokumentti
Tekniset tiedot
Merkki
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
70 A
Maximum Drain Source Voltage
30 V
Series
DMP
Package Type
POWERDI3333
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
13 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±25 V
Typical Gate Charge @ Vgs
64.2 nC @ 10 V
Width
3.35mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.35mm
Height
0.78mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Tuotetiedot
P-Channel MOSFET, 30V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 0,397
1 kpl (2000 kpl/kela) (ilman ALV)
€ 0,492
1 kpl (2000 kpl/kela) (Sis ALV:n)
2000
€ 0,397
1 kpl (2000 kpl/kela) (ilman ALV)
€ 0,492
1 kpl (2000 kpl/kela) (Sis ALV:n)
2000
Tekninen dokumentti
Tekniset tiedot
Merkki
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
70 A
Maximum Drain Source Voltage
30 V
Series
DMP
Package Type
POWERDI3333
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
13 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±25 V
Typical Gate Charge @ Vgs
64.2 nC @ 10 V
Width
3.35mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.35mm
Height
0.78mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Tuotetiedot