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Merkki
Fuji ElectricMaximum Continuous Collector Current
100 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
310 W
Package Type
M232
Configuration
Series
Mounting Type
Panel Mount
Channel Type
N
Pin Count
7
Transistor Configuration
Series
Dimensions
92 x 34 x 30mm
Maximum Operating Temperature
+150 °C
Alkuperämaa
Japan
Tuotetiedot
IGBT Modules 2-Pack, Fuji Electric
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Tarkista myöhemmin uudelleen.
€ 38,80
1 kpl (20 kpl/laatikko) (ilman ALV)
€ 48,112
1 kpl (20 kpl/laatikko) (Sis ALV:n)
20
€ 38,80
1 kpl (20 kpl/laatikko) (ilman ALV)
€ 48,112
1 kpl (20 kpl/laatikko) (Sis ALV:n)
20
Tekninen dokumentti
Tekniset tiedot
Merkki
Fuji ElectricMaximum Continuous Collector Current
100 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
310 W
Package Type
M232
Configuration
Series
Mounting Type
Panel Mount
Channel Type
N
Pin Count
7
Transistor Configuration
Series
Dimensions
92 x 34 x 30mm
Maximum Operating Temperature
+150 °C
Alkuperämaa
Japan
Tuotetiedot
IGBT Modules 2-Pack, Fuji Electric
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.