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Merkki
Fuji ElectricMaximum Continuous Collector Current
150 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
780 W
Package Type
M233
Configuration
Series
Mounting Type
Panel Mount
Channel Type
N
Pin Count
7
Transistor Configuration
Series
Dimensions
92 x 45 x 30mm
Maximum Operating Temperature
+150 °C
Tuotetiedot
IGBT Modules 2-Pack, Fuji Electric
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Tarkista myöhemmin uudelleen.
€ 106,00
kpl (ilman ALV)
€ 131,44
kpl (Sis ALV:n)
1
€ 106,00
kpl (ilman ALV)
€ 131,44
kpl (Sis ALV:n)
1
Osta irtotavarana
Määrä | Yksikköhinta |
---|---|
1 - 1 | € 106,00 |
2 - 4 | € 98,00 |
5 - 9 | € 95,50 |
10 - 19 | € 93,00 |
20+ | € 91,00 |
Tekninen dokumentti
Tekniset tiedot
Merkki
Fuji ElectricMaximum Continuous Collector Current
150 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
780 W
Package Type
M233
Configuration
Series
Mounting Type
Panel Mount
Channel Type
N
Pin Count
7
Transistor Configuration
Series
Dimensions
92 x 45 x 30mm
Maximum Operating Temperature
+150 °C
Tuotetiedot
IGBT Modules 2-Pack, Fuji Electric
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.